Fabrication of the organic tunnel diode was carried out by first preparing a low roughness Au film on an oxidized Si substrate. Photo resist masked application of alkanethiol film was carried out in ethanol to form a stable, highly ordered film by sulfur-gold bonding. Analysis of the film was performed using impedance spectroscopy and atomic force microscopy (AFM). Subsequent surface micromachining applied the complementary metal layer to the tail end of the film forming a permanent tunnel junction. The film thickness was experimentally verified to be 1.5 nm and in agreement with the chemical model. Testing of the tunnel junction was performed at room temperature on a probe station where the current-voltage characteristics showed a highly symmetrical diodic response.