Temperature dependent electrical characteristics of AlSiOxpSi solar cells
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Evaluation of synthesized new cellulose derivatives to make diodes and investigation of electrical and photoelectrical characteristics of these diodes
2024, Materials Science and Engineering: BPerformance of Ag/CdS/Au Schottky diode fabricated on free-standing cellulose paper
2022, Materials Science in Semiconductor ProcessingCurrent-voltage and capacitance-voltage characteristics of cadmium-doped p-silicon Schottky diodes
2021, Sensors and Actuators, A: PhysicalOn the mechanism of current-transport in Cu/CdS/SnO<inf>2</inf>/In-Ga structures
2011, Journal of Alloys and CompoundsCitation Excerpt :The current-transport/conduction mechanisms in semiconductor devices such as metal–semiconductor (MS), metal–insulator–semiconductor (MIS) and solar cells are dependent on various parameters, such as the process of surface preparation, formation of barrier height (BH) between the metal and semiconductor and its homogeneity, impurity concentration of semiconductor, density of interface states/traps or dislocations, series resistance (Rs) of device, device temperature and applied bias voltage. The current–voltage–temperature (I–V–T) and capacitance–voltage–temperature (C–V–T) characteristics of these devices have been extensively studied and reported in the literature for more than four decades because of simplicity in the fabrication [12–30]. In these devices, different current-transport mechanisms may dominate the others at a certain temperature and voltage regions, such as thermionic emission (TE), thermionic-field emission (TFE), field emission (FE), recombination tunneling via interface states or dislocations, minority carrier injection, recombination and multi-step tunneling.
The analysis of I-V characteristics of Schottky diodes by thermionic emission with a Gaussian distribution of barrier height
2011, Microelectronics ReliabilityCitation Excerpt :The mechanisms of carrier transport and some structural parameters of SBDs have been studied both experimentally and theoretically in past decades, but little experimental information is available on Schottky barrier formation and electronic states at metal–semiconductor (MS) interface [1–24].
Analysis of temperature dependent electrical characteristics of Au/n-GaAs/GaAs structures in a wide temperature range
2008, VacuumCitation Excerpt :Therefore it seems that trap-assisted multistep tunneling may be the mechanism that dominates the forward bias J–V characteristics in this voltage and temperature range for our samples. All these results suggests that the tunneling may play an important role in the current transport [18,23–26]. The forward bias I–V and reverse bias C–V characteristics of Au/n-GaAs/GaAs structures were measured in a wide temperature range (79–400 K).