In situ channelling analysis during thermal annealing of 4He+ implanted LiNbO3

https://doi.org/10.1016/0168-583X(89)90419-9Get rights and content

Abstract

LiNbO3 has been implanted with 1.0 MeV 4He+ in order to create a buried layer of crystal lattice damage which acts as the lower boundary of an optical waveguide with the air surface forming the upper boundary. The annealing behaviour of this damage, in the temperature range 20 ° C to 350 ° C, has been studied in vacuo by performing in situ channelling analysis of the disorder during the thermal processing. It is concluded that the minimum annealing temperature required to reduce waveguide attenuation is 150 ± 10 ° C and the optimum is 180 ± 15°C. The results are seen to be in overall agreement with recent optical waveguide measurements.

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Visiting Scientist from the University of Surrey. Present address: KX Technology Ltd, 1 Devonshire Court, Heathpartk, Honiton, Devon, EX14 8SD, UK. England.

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