Elsevier

Solid-State Electronics

Volume 32, Issue 12, December 1989, Pages 1707-1711
Solid-State Electronics

Transient intersubband absorption spectra of hot electrons in a modulation-doped multiple-quantum-well structure

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Abstract

The transient intersubband absorption spectra of hot electrons in a Ga0.47In0.53As/Al0.48In0.52As multiple-quantum-well structure are measured directly by picosecond infrared pulses. The transition from the n=1 to the n=2 conduction subband is located at 148 meV. The spectral width of the absorption band rises from 7 to 13 meV for an increase of the transient carrier temperature from 10 to 350 K. The reshaping of the band relaxes with carrier cooling on a time scale of 100 ps. The different dispersion of the two subbands and the thermally broadened distribution function of hot electrons result in the change of bandwidth with carrier temperature. Theoretical calculations account quantitatively for the data.

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