Photoelectron and electron energy loss spectra of epitaxial aluminum nitride

doi:10.1016/0038-1098(85)90528-9

Solid State Communications

Volume 56, Issue 1, October 1985, Pages 35-37

https://doi.org/10.1016/0038-1098(85)90528-9 Get rights and content

Abstract

The valence bands of epitaxial layers of A1N were studied by ultraviolet photoelectron spectroscopy and electron energy loss spectroscopy. A self-consistent band structure was calculated and the resultant density of states compared with the UPS spectra. Qualitative agreement was good, with discrepancies arising primarily from the neglect of dipole matrix elements.

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In the field of semiconductors, aluminium nitride has a unique importance due to its significant thermal, electrical, optical and electronic properties. Although various studies on structure, properties and applications of this material have been done [1–16]. There are relatively few studies of mechanical and ultrasonic behaviour of AlN [17–19].
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Photoelectron and electron energy loss spectra of epitaxial aluminum nitride

Abstract

Chem. Phys. Lett.

J. Phys. Chem. Solids

Solid State Commun.

Solid State Commun.

Phys. Rev. B

Phys. Rev. B

Phys. Stat. Solidi