Chemical bond approach to determining conductivity band gaps in amorphous chalcogenides and pnictides☆
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Investigation of structural changes in As<inf>x</inf>Se<inf>100-x</inf> amorphous thin films after electron beam irradiation with XAFS, XANES and Kelvin force microscopy
2020, Applied Surface ScienceCitation Excerpt :In addition, at x > 30 at. % As, the mobility of electrons and holes is maximal [24] and, correspondingly, charge diffusion from the SCR increases. This leads to a decrease in the charge density in the SCR and to a decrease in the surface relief upon electron irradiation of these films in comparison with films with a high concentration of Se.
Modeling and experimental determination of physical properties of Ge <inf>x</inf> -Ga <inf>y</inf> -Se <inf>1-x-y</inf> chalcogenide glasses I: Structure and mechanical properties
2019, Journal of Non-Crystalline SolidsCitation Excerpt :For example, GeSe2 would have only GeSe bonds, where a Se-rich Ge glass would contain some fraction of SeSe bonds which could be estimated from the stoichiometry. Several lists of bond energies have been used in the past including that of Sanderson [18]. Tg has been shown to correlate well with mean bond energy <E> in covalent glasses, and was shown to relate to the activation energy for viscous flow in an Arrhenius viscosity equation [19].
Thermo-physical properties of multi-component Se<inf>78-x</inf>Te<inf>20</inf>Sn<inf>2</inf>Pb<inf>x</inf> chalcogenide glasses
2015, Materials Chemistry and PhysicsCitation Excerpt :These bonds are created in severe sequence decreasing their bond energy awaiting all the valences of the atoms are saturated [42]. We have taken the values of different homo-polar and hetero-polar bond energies from reference [43]. These values are listed in Table 6.
Effect of γ-irradiation on the optical and electrical properties of Pb<inf>x</inf>Ge<inf>42-x</inf>Se<inf>48</inf>Te<inf>10</inf>
2015, Journal of Non-Crystalline SolidsCitation Excerpt :% can be discussed on the basis of the change in the average bond of the amorphous solid as a function of composition. The single bond energy values [29,30] of Ge–Ge (205.2 k.J·mol− 1), Pb–Pb (85.7 kJ·mol− 1) and Se–Se (206.1 kJ·mol− 1) and Allred–Rochow electronegativity values are used for estimating the single covalent bond energies of Ge–Se (234.9 kJ·mol− 1), Pb–Se (231.2 kJ·mol− 1) etc. Since Te remains constant in Pb–Ge–Se–Te glasses, the variation in average bond energy is only due to the variation of Pb, Ge and Se in these glasses.
Compositional congruency, correlation and high pressure polymorphism in electron-beam evaporated Pb<inf>1-x</inf>Ge<inf>x</inf>Te thin films
2014, Journal of Alloys and CompoundsCitation Excerpt :Thus, if only the strength of a Ge–Te bond is weaker than that of Pb–Te bond, the amount of Te ions which are incorporated into will decrease with the increasing of Ge concentration in the films. Our assumption can be supported from the experimental data of bond energies reported by Rao and Mohan [12]. It is pointed out that Ge–Te has energy of 1.87 eV, whereas Pb–Te has 1.90 eV, therefore, Ge ions cannot “hold” Te ions as tight as Pb ions do.
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Communication No. 103 from Solid State and Structural Chemistry Unit