Elsevier

Infrared Physics

Volume 22, Issue 4, July 1982, Pages 209-213
Infrared Physics

Long wavelength study of semiconducting germanium arsenide, GeAs

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Abstract

The first room temperature long wavelength reflection spectra in the 50–400 wave-number region of the infrared have been recorded for IV–VI monoclinic semiconductor germanium arsenide (GeAs). Analysis yields nine of the fifteen group-theory predicted infrared active zone optical phonon frequencies and the complex dielectric constant. Comparison with isomorphic gallium telluride GaTe shows a scaling relationship exists between the corresponding layerplane phonon frequencies.

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