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Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC

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Abstract

Color centers in silicon carbide (SiC) are promising candidates for quantum technologies. However, the richness of the polytype and defect configuration of SiC makes the accurate control of the types and position of defects in SiC still challenging. In this study, helium ion-implanted 4H–SiC was characterized by atomic force microscopy (AFM), confocal photoluminescence (PL), and confocal Raman spectroscopy at room temperature. PL signals of silicon vacancy were found and analyzed using 638-nm and 785-nm laser excitation by means of depth profiling and SWIFT mapping. Lattice defects (C–C bond) were detected by continuous laser excitation at 532 nm and 638 nm, respectively. PL/Raman depth profiling was helpful in revealing the three-dimensional distribution of produced defects. Differences in the depth profiling results and SRIM simulation results were explained by considering the depth resolution of the confocal measurement setup, helium bubbles, as well as swelling.

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Acknowledgements

This study was supported by the National Natural Science Foundation of China (Nos. 51575389, 51761135106), National Key Research and Development Program of China (2016YFB1102203), State key laboratory of precision measuring technology and instruments (Pilt1705), and the ‘111’ Project by the State Administration of Foreign Experts Affairs and the Ministry of Education of China (Grant No. B07014). The authors would also like to thank Mr. Qiang Li, Prof. Pengfei Wang, Prof. Jinshi Xu and Prof. Fangwen Sun from the University of Science and Technology of China, Prof. Xiaoying Li and Dr. Tao Xue from Tianjin University for valuable discussions of this paper.

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Authors and Affiliations

  1. State Key Laboratory of Precision Measuring Technology and Instruments, Centre of MicroNano Manufacturing Technology, Tianjin University, Tianjin, 300072, China

    Ying Song, Zongwei Xu, Yexin Fan, Jiayu Liu & Fengzhou Fang

  2. State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, China

    Rongrong Li & Jun Xu

  3. State Key Laboratory of Separation Membranes and Membrane Processes, Tianjin Polytechnic University, Tianjin, 300387, China

    Hong Wang

  4. Fraunhofer Institute for Integrated Systems and Device Technology (IISB), Schottkystrasse 10, 91058, Erlangen, Germany

    Mathias Rommel

  5. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstrasse 400, 01328, Dresden, Germany

    Georgy V. Astakhov & Gregor Hlawacek

  6. State Key Laboratory for Environment-friendly Energy Materials, Southwest University of Science and Technology, Mianyang, 621010, Sichuan, China

    Bingsheng Li

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  1. Ying Song
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  2. Zongwei Xu
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  3. Rongrong Li
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  11. Jun Xu
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Correspondence to Zongwei Xu, Mathias Rommel or Fengzhou Fang.

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Song, Y., Xu, Z., Li, R. et al. Photoluminescence and Raman Spectroscopy Study on Color Centers of Helium Ion-Implanted 4H–SiC. Nanomanuf Metrol 3, 205–217 (2020). https://doi.org/10.1007/s41871-020-00061-8

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  • DOI: https://doi.org/10.1007/s41871-020-00061-8

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