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Room temperature quantum key distribution characteristics of low-noise InGaAs/InP single-photon avalanche diode

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Abstract

InGaAs/InP single-photon avalanche diode (SPAD) with small active diameter and backside microlens was fabricated and its dark count and after-pulse noises were characterized. In addition, by optimizing multiplication layer and reducing the active diameter, high photon detection efficiency (PDE) was achieved as well as suppressed dark count probability (DCP) and after-pulse probability (APP) near room temperature. The gated Geiger-mode characteristics of SPAD were investigated with the gate amplitude of 6.6 V and repetition frequency of 10 MHz. Superior single-photon detection characteristics as PDE of 20.9%, DCP of 1.02 × 10–5 and APP of 0.8% were observed at the operation temperature of + 20 °C. It is a promising result that allows compact and low-cost detector module for quantum key distribution system with simple cooling apparatus.

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Acknowledgements

This work was supported by Institute of Information & communications Technology Planning & Evaluation (IITP) grant funded by the Korea government (MSIT) (No. 2020-0-00835, Development of high efficiency single photon detector with GHz operation speed based on compound semiconductor)

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Authors and Affiliations

  1. Wooriro Co., Ltd, Gwangju, 62453, South Korea

    Soo-Hyun Baek, Seung-Chul Yang & Chan-Yong Park

  2. Department of Physics, Chonnam National University, Gwangju, 61186, South Korea

    Soo-Hyun Baek & Sang-Wan Ryu

  3. ID Quantique, Gyeonggi, 13595, South Korea

    Chul-Woo Park & Seok-Beom Cho

Authors
  1. Soo-Hyun Baek
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  2. Seung-Chul Yang
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  3. Chan-Yong Park
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  4. Chul-Woo Park
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  6. Sang-Wan Ryu
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Correspondence to Sang-Wan Ryu.

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Baek, SH., Yang, SC., Park, CY. et al. Room temperature quantum key distribution characteristics of low-noise InGaAs/InP single-photon avalanche diode. J. Korean Phys. Soc. 78, 634–641 (2021). https://doi.org/10.1007/s40042-021-00111-4

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  • DOI: https://doi.org/10.1007/s40042-021-00111-4

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