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Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates

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Abstract

Previous studies have reported on the mechanical robustness and chemical stability of flexible amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) on plastic substrates both in flat and curved states. In this study, we investigate how the polyimide (PI) substrate affects hydrogen concentration in the a-IGZO layer, which subsequently influences the device performance and stability under bias-temperature-stress. Hydrogen increases the carrier concentration in the active layer, but it also electrically deactivates intrinsic defects depending on its concentration. The influence of hydrogen varies between the TFTs fabricated on a glass substrate to those on a PI substrate. Hydrogen concentration is 5% lower in devices on a PI substrate after annealing, which increases the hysteresis characteristics from 0.22 to 0.55 V and also the threshold voltage shift under positive bias temperature stress by 2 × compared to the devices on a glass substrate. Hence, the analysis and control of hydrogen flux is crucial to maintaining good device performance and stability of a-IGZO TFTs.

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Acknowledgements

This research was mainly supported by the MOTIE (Ministry of Trade, Industry and Energy (Project No. 10051403 and 10052027) and KDRC (Korea Display Research Corporation). This work was also supported in part by the research fund of Hanyang University(HY-2016-N), and the Future Semiconductor Device Technology Development Program (10067739) funded by the Ministry of Trade, Industry and Energy (MOTIE) and Korea Semiconductor Research Consortium (KSRC).

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Authors and Affiliations

  1. Division of Materials Science and Engineering, Hanyang University, Seoul, 04763, Republic of Korea

    Ki-Lim Han, Hyeon-Su Cho, Kyung-Chul Ok & Jin-Seong Park

  2. Division of Electrical Engineering, Hanyang University, Ansan, 15588, Republic of Korea

    Saeroonter Oh

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  1. Ki-Lim Han
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  2. Hyeon-Su Cho
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Correspondence to Saeroonter Oh.

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Han, KL., Cho, HS., Ok, KC. et al. Comparative Study on Hydrogen Behavior in InGaZnO Thin Film Transistors with a SiO2/SiNx/SiO2 Buffer on Polyimide and Glass Substrates. Electron. Mater. Lett. 14, 749–754 (2018). https://doi.org/10.1007/s13391-018-0083-5

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