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Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films

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Abstract

Ho, Mn, and Ho, Mn co-doped BiFeO3 thin films were deposited on Pt (100)/Ti/SiO2/Si substrates using solution gelation. The ferroelectric fatigue properties were clearly improved after doping with Ho and Mn. The doped BiFeO3 thin film displayed more strongly increased ferroelectric, leakage current, and fatigue properties compared with the pure BiFeO3 thin film. Thus, the improved performance of the BiFeO3 thin films depends on the structural transformation and reduced oxygen vacancy concentration. The present work provides a feasible approach to enhance the ferroelectric and fatigue properties of BiFeO3-based thin films.

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Authors and Affiliations

  1. School of Physical Science and Technology & Inner Mongolia Key Lab of Nanoscience and Nanotechnology, Inner Mongolia University, Hohhot, 010021, People’s Republic of China

    Jieyu Chen, Wenyu Xing, Qi Yun, Wei Gao, Chenghong Nie & Shifeng Zhao

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  1. Jieyu Chen
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  2. Wenyu Xing
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  3. Qi Yun
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  4. Wei Gao
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  5. Chenghong Nie
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  6. Shifeng Zhao
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Correspondence to Shifeng Zhao.

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Chen, J., Xing, W., Yun, Q. et al. Effects of Ho, Mn co-doping on ferroelectric fatigue of BiFeO3 thin films. Electron. Mater. Lett. 11, 601–608 (2015). https://doi.org/10.1007/s13391-015-5047-4

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  • DOI: https://doi.org/10.1007/s13391-015-5047-4

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