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Electrical, optical, and structural characteristics of ohmic contacts between p-GaN and ITO deposited by DC- and RF-magnetron sputtering

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Abstract

This paper reports the electrical, optical, and structural characteristics of ohmic contacts between p-GaN and indium tin oxide (ITO) deposited by DC and RF magnetron sputtering. Unlike the DC-sputtered ITO contacts, which showed non-linear current-voltage (I–V) behaviors irrespective of rapid-thermal annealing, the RF-sputtered ITO contacts become ohmic with increasing temperature up to 550°C under a N2 ambience. In the wavelength region below 410 nm, the light-transmittance of the RF-sputtered ITO contact was somewhat higher than that of the DC-sputtered ITO before and after annealing. Oxygen-rich and oxygen-deficient structures were formed on the as-deposited DC- and RF-sputtered ITO surface, respectively. On the other hand, annealing gave rise to an oxygen-rich ITO surface for both ITO samples. Unlike the DC-sputtered ITO contact, the RF-sputtered ITO sample experienced an amorphous to polycrystalline phase transformation after annealing.

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Authors and Affiliations

  1. Department of Electronic Engineering & LED-IT Fusion Technology Research Centre (LIFTRC), Yeungnam University, Gyeongbuk, 712-749, Korea

    Jun-Hyuk Choi, Seon-Ho Jang & Ja-Soon Jang

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  1. Jun-Hyuk Choi
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  2. Seon-Ho Jang
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  3. Ja-Soon Jang
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Correspondence to Ja-Soon Jang.

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Choi, JH., Jang, SH. & Jang, JS. Electrical, optical, and structural characteristics of ohmic contacts between p-GaN and ITO deposited by DC- and RF-magnetron sputtering. Electron. Mater. Lett. 9, 425–428 (2013). https://doi.org/10.1007/s13391-013-0023-3

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  • DOI: https://doi.org/10.1007/s13391-013-0023-3

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