Abstract
Tungsten oxide (WO3) was used as an anode buffer layer in conventional poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester (P3HT:PCBM-60) bulk hetero junction (BHJ) cells. Such a buffer layers acts as a hole-extraction layer and reduce series resistance, which leads to better performance of organic electronic devices. Organic photovoltaic (OPV) cells consisting of ITO/WO3/P3HT:PCBM/Al were fabricated. Photovoltaic devices with a short-circuit current density of 7.77 mA/cm2, an open-circuit voltage of 6.1 V, and a power conversion efficiency of 2.61% were achieved. This study revealed that WO3 based cells have significant shunt resistance which contributes to a high fill factor and open-circuit voltage. This demonstrates potential for using WO3 in poly(stylenesulfonate) doped poly(3,4-ethylenedioxythiophene):(PEDOT:PSS)-free systems.
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Oh, I.S., Kim, G.M., Han, S.H. et al. PEDOT:PSS-free organic photovoltaic cells using tungsten oxides as buffer layer on anodes. Electron. Mater. Lett. 9, 375–379 (2013). https://doi.org/10.1007/s13391-013-0003-7
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DOI: https://doi.org/10.1007/s13391-013-0003-7