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Effect of DC bias on dielectric properties of nanocrystalline CuAlO2

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Abstract

Grain boundary effect on the room temperature dielectric behavior in mechanically alloyed nanocrystalline CuAlO2 has been investigated using impedance spectroscopy under the applied DC bias voltages 0 V to 4.8 V in a periodic interval of 0.2 V. Analysis of impedance data confirms the existence of double Schottky potential barrier heights (Φ b ) between two adjacent grains (left and right side) with grain boundary and its influences in dielectric relaxation time (τ), dielectric constant (ɛ′) and dielectric loss (tan δ) factor. Also, clear evidence on the suppression of Φ b was demonstrated in the higher applied bias voltages with the parameter τ. At equilibrium state, τ is 0.63 ms and it was reduced to 0.13 ms after the 3.2 V applied DC bias. These observed DC bias voltage effects are obeying ‘brick layer model’ and also elucidates Φ b is playing a crucial role in controlling dielectric properties of nanomaterials.

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Authors and Affiliations

  1. Department of Medical Bionanotechnology, Chettinad Hospital and Research Institute Kelambakkam, Tamil Nadu, 603103, India

    T. Prakash

  2. Crystal Growth Center, Anna University, Chennai, 600025, India

    S. Ramasamy

  3. Department of Metallurgical and Materials Engineering, Indian Institute of Technology Madras, Chennai, 600036, India

    B. S. Murty

Authors
  1. T. Prakash
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  2. S. Ramasamy
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  3. B. S. Murty
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Correspondence to T. Prakash.

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Prakash, T., Ramasamy, S. & Murty, B.S. Effect of DC bias on dielectric properties of nanocrystalline CuAlO2 . Electron. Mater. Lett. 9, 207–211 (2013). https://doi.org/10.1007/s13391-012-2106-y

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  • DOI: https://doi.org/10.1007/s13391-012-2106-y

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