Abstract
For the past four decades, the microelectronics industry has relied on silicon complementary MOS (metal oxide semiconductors). Because of their excellent characteristics, MOSFETs have become key components in VLSI. A new method for fabricating nano bridge arrays of various materials makes use of a sacrificial template structure: a suspended silicon nanowire array. This method produces nano bridge arrays of diverse materials. Energy harvesters such as thermoelectric micro/nano generators could be used to power Internet of Things sensors. According to the findings of this work, a planar micro/nano generator was constructed using silicon micromachining technologies and a thermoelectric material composed of silicon-germanium (SiGe) nanowire arrays. A top-down nanofabrication approach and electro-chemical lithography are utilised to produce silicon nanowires from SOI wafers using direct-write electron beam lithography (EBL). VLS (Vapor Liquid Solid Growth) was utilised to demonstrate monolithic integration of bottom-up nano wire arrays on pre-made micro platforms (CVD-VLS). It is demonstrated in this study that MacEtch may be used to manufacture Si NW arrays on vertically aligned Si wafers. Template-assisted manufacturing techniques have also been used to construct vertically aligned Si NW arrays with regulated diameter and number density.
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The authors are thankful to Excel Engineering College, Namakkal, India for their cooperation and support during this research work.
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A Mohamedyaseen, P Suresh Kumar: Conceptualization; A Mohamedyaseen, P Suresh Kumar: investigation; A Mohamedyaseen, P Suresh Kumar, K. R. Kavitha, N. A. Vignesh: resources; A Mohamedyaseen, P Suresh Kumar: data curation; A Mohamedyaseen, P Suresh Kumar, K. R. Kavitha, N. A. Vignesh: writing—original draft preparation; A Mohamedyaseen, P Suresh Kumar, K. R. Kavitha, N. A. Vignesh: writing—review and editing; A Mohamedyaseen, P Suresh Kumar: visualization; P Suresh Kumar: supervision.
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Mohamedyaseen, A., Kumar, P.S., Kavitha, K.R. et al. Anisotropy Enhancing Vertically Aligned Silicon-Germanium Nanowire. Silicon 14, 12177–12184 (2022). https://doi.org/10.1007/s12633-022-01894-2
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DOI: https://doi.org/10.1007/s12633-022-01894-2