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Electrical Characterization and Study of Current Drift Phenomena and Hysteresis Mechanism in Junctionless Ion-Sensitive Field-Effect Transistor

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Abstract

A comprehensive study of the drain current drift mechanism and hysteresis phenomena in fabricated p-channel junctionless ion-sensitive field-effect transistor (JL-ISFET) has been investigated for the first time. The current drift measurements have been performed through transient analysis of drain current, under different pH and liquid-gate bias (Vlg). Further, time-dependent gate-capacitance (CG) has also been analyzed to see the effect of hydroxyl ions (OH−) in the sensing film (Al2O3). The hysteresis has also been investigated for different pH loop (7 → 3 → 7 → 11 → 7 and 7 → 11 → 7 → 3 → 7) and times (960s, 1500s, and 1920s). It has been observed that the drift of JL-ISFET occurs because of chemical modification of the sensing film, due to OH−. The proposed device exhibits a threshold voltage sensitivity of 58.2 mV/pH that is near the Nernstian limit. Further, the hysteresis width and maximum drain current drift are measured as \(\sim \) 1.3 mV and 2.4 μ A (\(\sim \) 75%), respectively.

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Acknowledgments

Authors acknowledge CENSE, Indian Institute of Science, Bengaluru for providing the fabrication and characterization facility under the Indian nanoelectronic user’s program (INUP), and department of Electronics and Communication Engineering, MNIT Jaipur to use their resources and support.

Funding

Authors would like to thank CENSE, Indian Institute of Science, Bengaluru for providing the fabrication and characterization facility under the Indian nanoelectronic user’s program (INUP).

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Authors and Affiliations

  1. Department of Electronics and Communication, Malaviya National Institue of Technology, Jaipur, India

    Jaydeep Singh Parmar, Nawaz Shafi & Chitrakant Sahu

Authors
  1. Jaydeep Singh Parmar
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  2. Nawaz Shafi
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  3. Chitrakant Sahu
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Contributions

Jaydeep singh parmar, Nawaz Shafi, and Chitrakant Sahu conceived this research and designed experiments, jaydeep singh parmar wrote the paper and participated in the design and interpretation of the data, Jaydeep singh parmar, Nawaz Shafi, and Chitrakant Sahu participated in the revisions of it.

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Correspondence to Jaydeep Singh Parmar.

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Parmar, J.S., Shafi, N. & Sahu, C. Electrical Characterization and Study of Current Drift Phenomena and Hysteresis Mechanism in Junctionless Ion-Sensitive Field-Effect Transistor. Silicon 14, 6829–6836 (2022). https://doi.org/10.1007/s12633-021-01454-0

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