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Recent Advancements in Wide Band Semiconductors (SiC and GaN) Technology for Future Devices

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Abstract

Wide bandgap (WBG) semiconductor materials have the capability of making power electronic components with a smaller size, faster switching speed, more reliability, and greater efficiency than their silicon-based counterparts. Real progress in the field of power electronics occurred when WBG devices came into use. Reportedly, among the various WBG semiconductors, gallium nitride (GaN) and silicon carbide (4 H-SiC) are perceived for the future of power electronics as excellent materials. The purpose of this chapter is to analyze some recent progress in WBG semiconductor power devices (e.g. diodes, MOSFETs, HEMTs, etc.). The emphasis is made on particularly important issues, such as SiC MOSFETs channel mobility, ohmic contacts in SiC devices, and the strategies for normally-off GaN HEMTs. An outline of the key challenges and a brief insight into the upcoming aspects of ultra-high-voltage SiC devices and GaN vertical devices has been provided in the end.

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Data Availability

The data used to support this study are included in the article.

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Acknowledgements

This study is supported by the Department of Electronics and Communication Engineering, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar, Punjab, 144011, India. The authors, therefore, gratefully acknowledge the Nanoelectronics Lab of the department for technical support and the Institute for financial support. The authors would like to acknowledge their colleagues for cooperation and valuable discussions.

Funding

The current research work is funded by the Department of Electronics and Communication Engineering, Dr. B. R. Ambedkar National Institute of Technology, Jalandhar, Punjab, 144011, India.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Dr. B.R. Ambedkar National Institute of Technology, Jalandhar, 144011, India

    Sadhana Singh & Tarun Chaudhary

  2. Department of Electronics and Communication Engineering, NIT Hamirpur, Hamirpur, Himachal Pradesh, 177005, India

    Gargi Khanna

Authors
  1. Sadhana Singh
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  2. Tarun Chaudhary
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  3. Gargi Khanna
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Contributions

The corresponding author “Sadhana Singh” has made substantial contributions to the acquisition of data, and/or analysis and interpretation of data. The second author “Tarun Chaudhary” has participated in drafting the article or revising it for important intellectual content, and gives final approval of the version to be submitted.

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Correspondence to Sadhana Singh.

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Singh, S., Chaudhary, T. & Khanna, G. Recent Advancements in Wide Band Semiconductors (SiC and GaN) Technology for Future Devices. Silicon 14, 5793–5800 (2022). https://doi.org/10.1007/s12633-021-01362-3

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