Skip to main content
SpringerLink
Log in

Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding

  • Published:
Rare Metals Aims and scope Submit manuscript

Abstract

Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding machine, the residual stress distribution along grinding marks and ground surface layer depth of the ground wafers are investigated using Raman microspectroscopy. The results show that the ground wafer surfaces mainly present compressive stress. The vicinity of pile-ups between two grinding marks presents higher a compressive stress. The stress value of the rough ground wafer is the least because the material is removed by the brittle fracture mode. The stress of the semi-fine ground wafer is the largest because the wafer surface presents stronger phase transformations and elastic-plastic deformation. The stress of the fine ground wafer is between the above two. The strained layer depths for the rough, semi-fine, and fine ground wafers are about 7.6 μm, 2.6 μm, and 1.1 μm, respectively. The main reasons for generation of residual stresses are phase transformations and elastic-plastic deformation.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Tönshoff H.K., Schmieden W.V., Inasakii I., König W., and Spur G., Abrasive machining of silicon, CIRP Ann. Manuf. Technol., 1990, 39(2): 621.

    Article  Google Scholar 

  2. Pei Z.J. and Strasbaugh A., Fine grinding of silicon wafers: designed experiment, Int. J. Mach. Tool. Manuf., 2002, 42: 395.

    Article  Google Scholar 

  3. Zarudi I. and Zhang L., Subsurface damage in single-crystal silicon due to grinding and polishing, J. Mater. Sci. Lett., 1996, 15: 586.

    Article  CAS  Google Scholar 

  4. Chen J. and De Wolf I., Study of damage and stress induced by backgrinding in Si wafers, Semicond. Sci. Technol., 2003, 18: 261.

    Article  CAS  Google Scholar 

  5. De Wolf I., Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits, Semicond. Sci. Technol., 1996, 11: 139.

    Article  Google Scholar 

  6. Chao C.L., Ma K.J., Chang Y., and Lin H.Y., Relieving the residual stress on machined silicon wafers: a comparison between rapid thermal annealing (RTA) and chemical etching processes, J. Chung Cheng Inst. of Technol., 2000, 29(1): 63.

    Google Scholar 

  7. Gogotsi Y., Zhou G.H., Ku S.S., and Cetinkunt S., Raman microspectroscopy analysis of pressure-induced metallization in scratching of silicon, Semicond. Sci. Technol., 2001, 16: 345.

    Article  CAS  Google Scholar 

  8. Jardret V., Zahouani H., Loubet J.L., and Mathia T.G., Understanding and quantification of elastic and plastic deformation during a scratch test, Wear, 1998, 218: 8.

    Article  CAS  Google Scholar 

  9. Zhang Y.X., Gao W., Kang R.K., and Guo D.M., Study on the hase transformations of the ground monocrystalline silicon wafers surfaces, Opt. Precis. Eng., 2008, 16(8): 1440.

    CAS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. School of Mechanical Engineering, Zhengzhou University, Zhengzhou, 450001, China

    Yinxia Zhang, Dong Wang & Wei Gao

  2. Key Laboratory for Precision and Non-traditional Machining Technology of the Ministry of Education, Dalian University of Technology, Dalian, 116024, China

    Renke Kang

Authors
  1. Yinxia Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Dong Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Wei Gao
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Renke Kang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Yinxia Zhang.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Zhang, Y., Wang, D., Gao, W. et al. Residual stress analysis on silicon wafer surface layers induced by ultra-precision grinding. Rare Metals 30, 278–281 (2011). https://doi.org/10.1007/s12598-011-0383-5

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s12598-011-0383-5

Keywords

Search

Navigation