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Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2

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Abstract

High-quality and large-scale growth of monolayer molybdenum disulfide (MoS2) has caught intensive attention because of its potential in many applications due to unique electronic properties. Here, we report the wafer-scale growth of high-quality monolayer MoS2 on singlecrystalline sapphire and also on SiO2 substrates by a facile metal-organic chemical vapor deposition (MOCVD) method. Prior to growth, an aqueous solution of sodium molybdate (Na2MoO4) is spun onto the substrates as the molybdenum precursor and diethyl sulfide ((C2H5)2S) is used as the sulfur precursor during the growth. The grown MoS2 films exhibit crystallinity, good electrical performance (electron mobility of 22 cm2·V-1·s-1) and structural continuity maintained over the entire wafer. The sapphire substrates are reusable for subsequent growth. The same method is applied for the synthesis of tungsten disulfide (WS2). Our work provides a facile, reproducible and cost-efficient method for the scalable fabrication of high-quality monolayer MoS2 for versatile applications, such as electronic and optoelectronic devices as well as the membranes for desalination and power generation.

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Acknowledgements

This work was financially supported by the CCMX project (“Large Area Growth of 2D Materials for Device Integration”), and was also funded from a sponsored research agreement from Hoffmann- LaRoche. Devices fabrication was partially carried out at the Center for Micro/nanotechnology (CMi) at École Polytechnique Fédérale de Lausanne (EPFL). We thank the Centre Interdisciplinaire de Microscopie Electronique (CIME) at EPFL for access to electron microscopes. H. K., Y. F. Z and A. K. acknowledge funding from the European Union — Horizon H2020 Future and Emerging Technologies under grant agreements No. 696656 and 785219 (Graphene Flagship).

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Authors and Affiliations

  1. Laboratory of Nanoscale Biology, Institute of Bioengineering, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

    Huanyao Cun, Michal Macha, Ke Liu & Aleksandra Radenovic

  2. Nanoscale Electronics and Structures, Electrical Engineering Institute, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

    HoKwon Kim, Yanfei Zhao & Andras Kis

  3. Nanoscale Electronics and Structures, Institute of Materials Science and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

    HoKwon Kim, Yanfei Zhao & Andras Kis

  4. Interdisciplinary Center for Electron Microscopy (CIME), École Polytechnique Fédérale de Lausanne (EPFL), 1015, Lausanne, Switzerland

    Thomas LaGrange

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  1. Huanyao Cun
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  2. Michal Macha
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Correspondence to Huanyao Cun.

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Cun, H., Macha, M., Kim, H. et al. Wafer-scale MOCVD growth of monolayer MoS2 on sapphire and SiO2. Nano Res. 12, 2646–2652 (2019). https://doi.org/10.1007/s12274-019-2502-9

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  • DOI: https://doi.org/10.1007/s12274-019-2502-9

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