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Polarity control of carrier injection for nanowire feedback field-effect transistors

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Abstract

We present polarity control of the carrier injection for a feedback field-effect transistor (FBFET) with a selectively thinned p+-i-n+ Si nanowire (SiNW) channel and two separate gates. The SiNW FBFET can be reconfigured in the p- or n-channel operation modes via simple control of electric signals. The two separate gates induce potential barriers in the SiNW channel for selective control of the carrier injection. In contrast to previously reported reconfigurable transistors, our transistor features symmetry of the electrical characteristics for the p- and n-channel operation modes. Positive-feedback operation of the SiNW FBFET provides superior switching characteristics for the p- and n-type configurations, including the on/off ratios (∼ 105) and subthreshold swings (1.36-1.78 mV/dec). This novel transistor is a promising candidate for reconfigurable electronics.

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Acknowledgements

This research was supported by the MOTIE (Ministry of Trade, Industry & Energy) (10067791) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device, in part by the Mid-career Researcher Program (No. NRF-2016R1E1A1A02920171), the Brain Korea 21 Plus Project in 2019 through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning and the Korea University Grant.

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  1. Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea

    Doohyeok Lim & Sangsig Kim

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  1. Doohyeok Lim
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  2. Sangsig Kim
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Correspondence to Sangsig Kim.

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Lim, D., Kim, S. Polarity control of carrier injection for nanowire feedback field-effect transistors. Nano Res. 12, 2509–2514 (2019). https://doi.org/10.1007/s12274-019-2477-6

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  • DOI: https://doi.org/10.1007/s12274-019-2477-6

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