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Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions

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Abstract

Van der Waals (vdW) heterojunctions are equipped to avert dangling bonds due to weak, inter-layer vdW force, and ensure strong in-plane covalent bonding for two-dimensional layered structures. We fabricated four heterojunctions devices of different layers based on p-type distorted 1T-MX2 ReSe2 and n-type hexagonal MoS2 nanoflakes, and measured their electronic and optoelectronic properties. The device showed a high rectification coefficient of 500 for the diode, a high ON/OFF ratio and higher electron mobility for the field-effect transistor (FET) compared with the individual components, and a high current responsivity (R λ ) and external quantum efficiency (EQE) of 6.75 A/W and 1,266%, respectively, for the photodetector.

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Authors and Affiliations

  1. State Key Laboratory of Superlattices and Microstructures, Institute of semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, China

    Xiaoting Wang, Le Huang, Nengjie Huo, Zhongming Wei & Jingbo Li

  2. Physics and Electronic Engineering College, Henan Normal University, Xinxiang, 453007, China

    Yuting Peng & Congxin Xia

  3. School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, Arizona, 85287, USA

    Kedi Wu & Sefaattin Tongay

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  1. Xiaoting Wang
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  2. Le Huang
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Correspondence to Zhongming Wei, Sefaattin Tongay or Jingbo Li.

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Wang, X., Huang, L., Peng, Y. et al. Enhanced rectification, transport property and photocurrent generation of multilayer ReSe2/MoS2 p–n heterojunctions. Nano Res. 9, 507–516 (2016). https://doi.org/10.1007/s12274-015-0932-6

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