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A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads

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Abstract

The study mainly explores the fabrication mechanism for fabricating sapphire wafer substrate, by using chemical mechanical polishing (CMP) method. A slurry containing the abrasive particles of SiO2 is used to contact with the sapphire substrate polish and to produce chemical reaction for removal of sapphire wafer substrate when CMP method is used. The study observes the changes of the removal amount of sapphire wafer substrate when the pattern-free polishing pad and hole-pattern polishing pad are used under different down forces, polishing velocities, abrasive particle sizes and slurry concentrations. Employing regression analysis theory, the study makes improvement of the equation of material removal rate (MRR) to be the material removal height per 30 minutes (MRRh), and develops a compensation parameter Crv of the error caused by the volume concentration of slurry. The results of experimental analysis show that under a certain down force, if the polishing velocity is greater, the material removal amount will be greater. Generally speaking, the material removal amount of hole-pattern polishing pad is greater than that of pattern-free polishing pad. As to the relationship between abrasive particle size and slurry concentration, when particle size is smaller, the volume concentration of slurry will be higher, and the number of abrasives for polishing wafer will be greater. As a result, a better material removal depth can be acquired. Through the above analytical results, considerable help is offered to the polishing of sapphire wafer.

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Authors and Affiliations

  1. Department of Mechanical Engineering, National Taiwan University of Science and Technology, No. 43, Section 4, Keeling Road, Taipei, 106, Taiwan

    Zone-Ching Lin, Wei-Shuen Huang & Ju-Shiau Tsai

Authors
  1. Zone-Ching Lin
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  2. Wei-Shuen Huang
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  3. Ju-Shiau Tsai
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Corresponding author

Correspondence to Zone-Ching Lin.

Additional information

Recommended by Associate Editor Haedo Jung

Zone-Ching Lin was born in Taiwan, R.O.C. He received his BS degree in mechanical engineering from National Cheng Kung University, Taiwan, in 1973 and his MS in mechanical engineering from the National Taiwan University, Taipei, in 1975. He later received his PhD in manufacturing group from the school of Industrial Engineering, Purdue University, West Lafayette in 1984. Now, he is a chair professor in the Department of Mechanical Engineering of National Taiwan University of Science and Technology, Taipei. He is presently involved in research for innovative research method of machinery products, advanced micro/nano-mechanical technology and metal cutting.

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Lin, ZC., Huang, WS. & Tsai, JS. A study of material removal amount of sapphire wafer in application of chemical mechanical polishing with different polishing pads. J Mech Sci Technol 26, 2353–2364 (2012). https://doi.org/10.1007/s12206-012-0613-2

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  • DOI: https://doi.org/10.1007/s12206-012-0613-2

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