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The effects of lithographic residues and humidity on graphene field effect devices

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Abstract

Recently, unknown-manner changes in charge neutrality point (CNP) positioning were ascribed to humidity at graphene field effect transistors (GFETs). While the exact means of humidity interacting with hydrophobic graphene remains unknown, this work examines pristine and lithographic-process-applied graphene surfaces with surface enhanced Raman spectra (SERS). SERS analysis shows that the lithographic-process-applied graphene does not have the same properties as those of pristine graphene. Furthermore, this study has experimentally investigated the effect of humidity on the transfer characteristics of GFET and proposed a model to explain the formation of asymmetric I DS–V bg branches in accordance with the SERS results and humidity responses.

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Acknowledgements

We will never forget Aslı ŞİMŞEK, who was a master student at our group, and we would like to thank her for valuable contributions. We would like to thank ARGESAN for contribution in fabricating a mask aligner. This work was supported by the Scientific and Technical Research Council of Turkey (TÜBİTAK) under Grant no. 108T930.

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Authors and Affiliations

  1. Department of Physics, Science Faculty, Erciyes University, Kayseri, 38039, Turkey

    BEHİYE BOYARBAY KANTAR

  2. Department of Physics, Niğde University, Graduate School Natural and Applied Sciences, Niğde, 51240, Turkey

    MUHİTTİN ÖZTÜRK

  3. Department of Physics, Art and Science Faculty, Bozok University, Yozgat, 66900, Turkey

    HİDAYET ÇETİN

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  1. BEHİYE BOYARBAY KANTAR
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KANTAR, B.B., ÖZTÜRK, M. & ÇETİN, H. The effects of lithographic residues and humidity on graphene field effect devices. Bull Mater Sci 40, 239–245 (2017). https://doi.org/10.1007/s12034-016-1338-0

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  • DOI: https://doi.org/10.1007/s12034-016-1338-0

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