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Electrical characterizations of Neutron-irradiated SiC Schottky diodes

  • Materials (Organic, Inorganic, Electronic, Thin Films)
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Abstract

Neutrons with an average energy of 9.8±0.8 MeV were irradiated onto silicon carbide Schottky diodes. After bombardment at a fluency of 2.75×1011 neutron/cm2, the Schottky barrier height, ideality factor, and the leakage currents remained unchanged. The electrical properties began to deteriorate after bombardment at a fluency of 5.5×1011 neutron/cm2. In this study, we demonstrate that SiC SBD is robust under neutron irradiations and is well suited for space operations up to bombardments at a fluency of 2.75×1011 neutron/cm2.

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Authors and Affiliations

  1. Department of Chemical and Biological Engineering, Korea University, Seoul, 136-713, Korea

    Geunwoo Ko, Hong-Yeol Kim, Joona Bang & Jihyun Kim

Authors
  1. Geunwoo Ko
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  2. Hong-Yeol Kim
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  3. Joona Bang
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  4. Jihyun Kim
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Corresponding author

Correspondence to Jihyun Kim.

Additional information

This article is dedicated to Professor Chul Soo Lee in commemoration of his retirement from Department of Chemical and Biological Engineering of Korea University.

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Ko, G., Kim, HY., Bang, J. et al. Electrical characterizations of Neutron-irradiated SiC Schottky diodes. Korean J. Chem. Eng. 26, 285–287 (2009). https://doi.org/10.1007/s11814-009-0049-2

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  • DOI: https://doi.org/10.1007/s11814-009-0049-2

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