Abstract
The effect of the parameters on the open-circuit voltage, V OC of a-Si:H/c-Si heterojunction solar cells was explored by an analytical model. The analytical results show that V OC increases linearly with the logarithm of illumination intensity under usual illumination. There are two critical values of the interface state density (D it) for the open-circuit voltage (V OC), D crit,1it and D crit,2it (a few 1010 cm−2∙eV−1). V OC decreases remarkably when D it is higher than D crit,1it . To achieve high V OC, the interface states should reduce down to a few 1010 cm−2·eV−1. Due to the difference between the effective density of states in the conduction and valence band edges of c-Si, the open-circuit voltage of a-Si:H/c-Si heterojunction cells fabricated on n-type c-Si wafers is about 22 mV higher than that fabricated on p-type c-Si wafers at the same case. V OC decreases with decreasing the a-Si:H doping concentration at low doping level since the electric field over the c-Si depletion region is reduced at low doping level. Therefore, the a-Si:H layer should be doped higher than a critical value of 5×1018 cm−3 to achieve high V OC.
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Foundation item: Project(11374094) supported by the National Natural Science Foundation of China; Project(2013HZX23) supported by Natural Science Foundation of Hunan University of Technology, China; Project(2015JJ3060) supported by Natural Science Foundation of Hunan Province of China
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Zhong, Cl., Geng, Kw., Luo, Le. et al. An analytical model to explore open-circuit voltage of a-Si:H/c-Si heterojunction solar cells. J. Cent. South Univ. 23, 598–603 (2016). https://doi.org/10.1007/s11771-016-3106-0
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DOI: https://doi.org/10.1007/s11771-016-3106-0