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POCl3 diffusion for industrial Si solar cell emitter formation

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Abstract

POCl3 diffusion is currently the de facto standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O2 flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl3 tube diffused emitters.

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Authors and Affiliations

  1. School of Photovoltaic and Renewable Energy Engineering, UNSW Australia, Sydney, NSW 2052, Australia

    Hongzhao Li, Kyung Kim, Brett Hallam, Bram Hoex, Stuart Wenham & Malcolm Abbott

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  1. Hongzhao Li
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  2. Kyung Kim
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  3. Brett Hallam
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Correspondence to Hongzhao Li.

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Li, H., Kim, K., Hallam, B. et al. POCl3 diffusion for industrial Si solar cell emitter formation. Front. Energy 11, 42–51 (2017). https://doi.org/10.1007/s11708-016-0433-7

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