Abstract
Self-organized InGaAs/GaAs quantum dots (QDs) stacked multilayers have been prepared by solid source molecular beam epitaxy. Cross-sectional transmission electron microscopy shows that the InGaAs QDs are nearly perfectly vertically aligned in the growth direction [100]. The filtering effect on the QDs distribution is found to be the dominant mechanism leading to vertical alignment and a highly uniform size distribution. Moreover, we observe a distinct infrared absorption from the sample in the range of 8.6–10.7 µm. This indicates the potential of QDs multilayer structure for use as infrared photodetector.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
D. Leonard, M. Krishnamarthy, C.M. Reaves, S.P. DenBaars and P. M. Petroff, Appl. Phys. Lett. 63, 3203 (1993).
C. Terchert, M.G. Lagally, L.J. Peticolas, J.C. Bean and J. Tersoff, Phys. Rev. B 53, 16334 (1996).
B. Rahmati, W. Jaeger, H. Trinkaus, R. Loo, L. Vescan and H. Lueth, Appl. Phys. A: Solids Surf. 62, 575 (1996).
A.A. Darhuber, P. Schittenhelm, V. Holy, J. Stangl, G. Bauer and G. Abstreiter, Phys. Rev. B 55, 15652 (1997).
Q. Xie, A. Madhukar, P. Chen and N. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
A.A. Darhuber, V. Holy, J. Stangl, G. Bauer, A. Krost, F. Heinrichsdorff, M. Grundmann, D. Bimberg, V.M. Ustinov, P.S. Kop’ev, Aa.O. Kosogov and P. Werner, Appl. Phys. Lett. 70, 955 (1997).
J. Tersoff, C. Teichert and M.G. Lagally, Phys. Rev. Lett. 76, 1675 (1996).
The QDs spacing is considered to be the distance between the center of two QDs.
X. Zhou, P.V. Bhattacharya, G. Hugo, S.C. Hong and E. Gulari, Appl. Phys. Lett. 54, 855 (1989).
J. Phillips, K. Kamath, X. Zhou, N. Chervela and P. Bhattacharya, Appl. Phys. Lett. 71, 2079 (1997).
S. Sauvage, P. Boucaud, F.H. Julien, J.-M. Gerard and J.-Y. Marzin, J. Appl. Phys. 82, 3396 (1997).
G Karunasiri, J.S. Park, J. Chen, R. Shih, J.F. Scheihing and M.A. Dodd, Appl. Phys. Lett. 67, 2600 (1995).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Zhuang, Q.D., Li, J.M., Zeng, Y.P. et al. Structural and infrared absorption properties of self-organized InGaAs/GaAs quantum dots multilayers. J. Electron. Mater. 28, 503–505 (1999). https://doi.org/10.1007/s11664-999-0102-2
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-999-0102-2