Abstract
We demonstrate thin films of PbSe1−xSx and PbSe1−xTex lead chalcogenide ternary alloys as infrared detectors. The films were deposited on single crystal BaF2 substrates using physical vapor deposition. Detectivity in the wavelength range from 1 μm to 5 μm was measured at −40°C, and all films showed photoresponse signals more than an order of magnitude larger than their noise. The detectivity spectra were used to assess the tunability of the band gap from mixing the lead chalcogenide binaries. The PbSe1−xSx system showed tunability that followed Vegard’s law, while the PbSe1−xTex system showed tunability with a bowing parameter of −0.096 eV. Comparisons to measurements from the literature taken at room temperature suggest that the bowing parameter decreases with decreasing temperature, and the band gap temperature coefficient with respect to composition also shows bowing.
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Acknowledgments
Funding from ONR SBIR award number N68335- 19-C-0070 is gratefully acknowledged. This work made use of the MRSEC Shared Experimental Facilities at MIT, supported by the National Science Foundation under Award No. DMR-1419807.
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Su, P., Pujari, R., Boodhoo, V. et al. Ternary Lead Chalcogenide Alloys for Mid-Infrared Detectors. J. Electron. Mater. 49, 4577–4580 (2020). https://doi.org/10.1007/s11664-020-08114-w
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DOI: https://doi.org/10.1007/s11664-020-08114-w