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Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors

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Abstract

The passivation effect of atomic layer deposition of (ALD) Al2O3 film on a HgCdTe infrared detector was investigated in this work. The passivation effect of Al2O3 film was evaluated by measuring the minority carrier lifetime, capacitance versus voltage (C–V) characteristics of metal–insulator–semiconductor devices, and resistance versus voltage (R–V) characteristics of variable-area photodiodes. The minority carrier lifetime, C–V characteristics, and R–V characteristics of HgCdTe devices passivated by ALD Al2O3 film was comparable to those of HgCdTe devices passivated by e-beam evaporation of ZnS/CdTe film. However, the baking stability of devices passivated by Al2O3 film is inferior to that of devices passivated by ZnS/CdTe film. In future work, by optimizing the ALD Al2O3 film growing process and annealing conditions, it may be feasible to achieve both excellent electrical properties and good baking stability.

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Authors and Affiliations

  1. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Peng Zhang, Zhen-Hua Ye, Chang-Hong Sun, Yi-Yu Chen, Chun Lin, Ring-Jun Ding & Li He

  2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Tian-Ning Zhang & Xin Chen

  3. University of Chinese Academy of Sciences, Beijing, 100039, China

    Peng Zhang, Yi-Yu Chen & Tian-Ning Zhang

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  1. Peng Zhang
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  2. Zhen-Hua Ye
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  6. Xin Chen
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  7. Chun Lin
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  9. Li He
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Correspondence to Zhen-Hua Ye.

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Zhang, P., Ye, ZH., Sun, CH. et al. Passivation Effect of Atomic Layer Deposition of Al2O3 Film on HgCdTe Infrared Detectors. J. Electron. Mater. 45, 4716–4720 (2016). https://doi.org/10.1007/s11664-016-4686-z

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  • DOI: https://doi.org/10.1007/s11664-016-4686-z

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