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Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation

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Abstract

Nd3+/Zr4+-cosubstituted bismuth titanate (BNTZ x , x = 0, 0.05, 0.1, 0.3, and 0.5) thin films have been fabricated by chemical solution deposition and their polarization hysteresis loops, leakage current, and capacitance butterfly loops investigated. Results show that, at Zr content of x = 0.1, both capacitance and remanent polarization can be greatly improved. The BNTZ0.1 film also exhibits fatigue-free, excellent leakage current characteristics (I ≈ 9.44 × 10−9 A) at applied voltage of 3 V. High-quality c-axis-oriented BNTZ x = 0.1 films with improved electrical properties were fabricated; this finding supports the feasibility of engineering polarization rotation in ferroelectric bismuth titanate (as suggested theoretically by Roy et al. in Appl. Phys. Lett. 102:182901, 2013).

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References

  1. J.F. Scott and C.A.P. de Araujo, Science 246, 1400 (1989).

    Article  Google Scholar 

  2. B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, L. Lee, and W. Joe, Nature 401, 682 (1999).

    Article  Google Scholar 

  3. T. Watanabe, T. Kojima, T. Sakai, H. Funakubo, M. Osada, Y. Noguchi, and M. Miyayama, J. Appl. Phys. 92, 1518 (2002).

    Article  Google Scholar 

  4. A.Z. Simoes, M.A. Ramirez, N.A. Perruci, C.S. Riccardi, E. Longo, and J.A. Varela, Appl. Phys. Lett. 86, 112909 (2005).

    Article  Google Scholar 

  5. H. Maiwa, N. Iizawa, D. Togawa, T. Hayashi, W. Sakamoto, M. Yamada, and S. Hirano, Appl. Phys. Lett. 82, 1760 (2003).

    Article  Google Scholar 

  6. T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, and M. Miyayama, Appl. Phys. Lett. 80, 100 (2002).

    Article  Google Scholar 

  7. J.S. Kim, C.W. Ahn, H.J. Lee, S.Y. Lee, I.W. Kim, J.S. Bae, and J.H. Jeong, Ceram. Int. 30, 1565 (2004).

    Article  Google Scholar 

  8. F. Yang, F. Zhang, G. Hu, Z. Zong, and M. Tang, Appl. Phys. Lett. 106, 172903 (2015).

    Article  Google Scholar 

  9. J. Chen, Q. Yun, W. Gao, Y. Bai, C. Nie, and S. Zhao, Mater. Lett. 136, 11 (2014).

    Article  Google Scholar 

  10. J. Chen, C. Nie, Y. Bai, and S. Zhao, J. Mater. Sci. 26, 5917 (2015).

    Google Scholar 

  11. N.T. Reddy, N.V. Prasad, G.S. Kumar, and G. Prasad, Phase Trans. 87, 1246 (2014).

    Article  Google Scholar 

  12. O. Subohi, G.S. Kumar, M.M. Malik, and R. Kurchania, J. Mater. Sci. (2015). doi:10.1007/s10854-015-3074-4.

    Google Scholar 

  13. D. Guo, M. Li, L. Pei, B. Yu, G. Wu, X. Zhao, Y. Wang, and J. Yu, J. Phys. D 39, 5033 (2006).

    Article  Google Scholar 

  14. X.L. Zhong, H. Liao, Z.S. Hu, B. Li, and J.B. Wang, Mater. Lett. 64, 2644 (2010).

    Article  Google Scholar 

  15. L.R. Wang, C.C. Chen, Z.H. Tang, C.H. Lu, and B.H. Yu, Vacuum 85, 203 (2010).

    Article  Google Scholar 

  16. A. Roy, R. Prasad, S. Auluck, and A. Garg, Appl. Phys. Lett. 102, 182901 (2013).

    Article  Google Scholar 

  17. U. Chon, H. Jang, M. Kim, and C. Chang, Phys. Rev. Lett. 89, 087601 (2002).

    Article  Google Scholar 

  18. S.R. Das, P.S. Dobal, B. Sundarakannan, R.R. Das, and R.S. Katiyar, J. Raman Spectrosc. 38, 1077 (2007).

    Article  Google Scholar 

  19. S.E. Cummins, J. Appl. Phys. 39, 2268 (1968).

    Article  Google Scholar 

  20. M.C. Kao, H.Z. Chen, S.L. Young, J.B. Shi, and C.H. Lin, J. Cryst. Growth 310, 2520 (2008).

    Article  Google Scholar 

  21. S.T. Zhang, Y.F. Chen, J. Wang, G.X. Cheng, Z.G. Liu, and N.B. Ming, Appl. Phys. Lett. 84, 3660 (2004).

    Article  Google Scholar 

  22. S.T. Zhang, H.W. Cheng, Y.F. Chen, C.H. Song, J. Wang, Y.D. Xia, X.N. Zhao, Z.G. Liu, and N.B. Ming, Solid State Commun. 130, 235 (2004).

    Article  Google Scholar 

  23. B.H. Park, T.W. Noh, J. Lee, C.Y. Kim, and W. Jo, Appl. Phys. Lett. 70, 1101 (1997).

    Article  Google Scholar 

  24. M. Grossmann, O. Lohse, D. Bolten, U. Boettger, T. Schneller, and R. Waser, J. Appl. Phys. 92, 2680 (2002).

    Article  Google Scholar 

  25. C.K. Wong and F.G. Shin, Appl. Phys. Lett. 86, 042901 (2005).

    Article  Google Scholar 

  26. Z. Ye, M.H. Tang, Y.C. Zhou, X.J. Zheng, C.P. Cheng, Z.S. Hu, and H.P. Hu, Appl. Phys. Lett. 90, 082905 (2007).

    Article  Google Scholar 

  27. H.M. Chen and J.Y. Lee, Appl. Phys. Lett. 73, 309 (1998).

    Article  Google Scholar 

  28. S.T. Zhang, X.J. Zhang, H.W. Cheng, Y.F. Chen, Z.G. Liu, N.B. Ming, X.B. Hu, and J.Y. Wang, Appl. Phys. Lett. 83, 4378 (2003).

    Article  Google Scholar 

  29. Y.C. Chang and D.H. Kuo, Thin Solid Films 515, 1683 (2006).

    Article  Google Scholar 

  30. E. Bosquet, J. Junquera, and P. Ghosez, Phys. Rev. B 82, 045426 (2010).

    Article  Google Scholar 

  31. G.D. Hu, J. Appl. Phys. 100, 096109 (2006).

    Article  Google Scholar 

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Acknowledgements

The work was supported by funding from the National Natural Science Foundation of China (Nos. 11104116, 51372100 and 51472210), the Outstanding Young Scientists Foundation Grant of Shandong Province (No. BS2011CL003), 973 Program (Grant No. 2012CB326404), and the Doctoral Foundation of University of Jinan, China (No. 161220).

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Authors and Affiliations

  1. School of Materials Science and Engineering, University of Jinan, Jinan, 250022, People’s Republic of China

    Feng Yang, Yichen Guo, Zhihao Zong, Xuehong Hao & Yiwen Shi

  2. Key Laboratory of Inorganic Functional Materials in Universities of Shandong, University of Jinan, Jinan, 250022, People’s Republic of China

    Feng Yang

  3. Hunan Provincial National Defense Key Laboratory of Key Film Materials & Application for Equipments, Xiangtan, 411105, People’s Republic of China

    Minghua Tang

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  1. Feng Yang
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  2. Yichen Guo
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  3. Zhihao Zong
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  5. Yiwen Shi
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Correspondence to Feng Yang.

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Yang, F., Guo, Y., Zong, Z. et al. Improving the Electrical Properties of Zr-Doped Bi3.15Nd0.85Ti3O12 Thin Films by Engineering Polarization Rotation. J. Electron. Mater. 45, 3540–3545 (2016). https://doi.org/10.1007/s11664-016-4508-3

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