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Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering

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Abstract

The fabrication and electrical characterization of InZnO:N thin film transistors (TFTs) were investigated in this work. The InZnO:N film was deposited on SiO2/p-type Si substrates by radio frequency magnetron sputtering as the active layer of the TFTs at room temperature. In order to optimize the performance of the InZnO:N TFTs, the effect of the oxygen contents in the preparation of the active layer is investigated. We found that an appropriate O2/Ar gas flow ratio is very beneficial for the InZnO:N TFTs, and when the O2/Ar gas flow ratio is at 1/30, the transistor exhibited a high field-effect mobility of 39.3 cm2/Vs, a threshold voltage of 2.4 V and a I ON/OFF ratio of 1.1 × 107.

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Authors and Affiliations

  1. Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, People’s Republic of China

    Yunfei Peng, Hailong Wang, Wenqi Zhang, Bin Li, Dongzhan Zhou, Xiqing Zhang & Yongsheng Wang

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  1. Yunfei Peng
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  2. Hailong Wang
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  3. Wenqi Zhang
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  4. Bin Li
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  5. Dongzhan Zhou
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  6. Xiqing Zhang
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  7. Yongsheng Wang
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Correspondence to Xiqing Zhang.

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Peng, Y., Wang, H., Zhang, W. et al. Fabrication and Electrical Characterization of InZnO:N Thin Film Transistors Prepared by Radio Frequency Magnetron Sputtering. J. Electron. Mater. 45, 3340–3342 (2016). https://doi.org/10.1007/s11664-016-4491-8

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  • DOI: https://doi.org/10.1007/s11664-016-4491-8

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