Abstract
Using Raman light scattering and Rutherford backscattering, we studied the structural disorder of layered GaS crystals before and after hydrogen (H +2 ) implantation with energy of 140 keV. Initially, the elemental components of GaS were distributed uniformly in depth, and this distribution remained stable up to a dose of 5 × 1015 at./cm2. Doses up to 1 × 1015 at./cm2 increased the photoresponse (from 0.66 to 5.3 times) over a wide wavelength range from 490 nm to 900 nm. Additionally, the irradiated samples displayed new photoresponse peaks with maximums at λ = 668 nm and λ = 739 nm, corresponding to new energy levels of 0.59 eV and 0.77 eV, respectively. However, further dose increase up to 5 × 1015 at./cm2 dramatically reduced the photoresponse due to structural disorder (amorphization). The experimental value of the critical dose for initial amorphization was greater than 1 × 1015 at./cm2, which agrees with the calculated value. Raman scattering confirmed the photoresponse results.
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Garibov, A., Madatov, R., Mustafayev, Y. et al. Structural and Optical Properties of GaS Single Crystals Irradiated by Hydrogen. J. Electron. Mater. 44, 3375–3379 (2015). https://doi.org/10.1007/s11664-015-3904-4
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DOI: https://doi.org/10.1007/s11664-015-3904-4