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Thermoelectric Performance of ZnO:Al/ZnO:(Al,In) Quantum Well Multilayer Structures as a Function of Indium Composition and Band-Gap Offset at High Operating Temperatures

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Abstract

This study investigates the thermoelectric (TE) power factor for radiofrequency (RF)-sputtered n-type ZnO:Al/ZnO:(Al,In) multilayer quantum wells (QW) and the dependence on band-gap offset at high operating temperatures. The structures are 50 periods of 10-nm-thick barrier and well layers. The TE power factors for all films are promising (>20 × 10−4 W/m2 K); however, a decline in electronic transport is evident for each of the doped wells over a specific range of operating temperatures. This supports the need for optimum doping levels for a specific operating temperature range; e.g., 2 at.%, 5 at.%, and 8 at.% indium are optimum at 300 K to 600 K, 600 K to 725 K, and >725 K, respectively. A model has also been developed to calculate the QW electronic transport as a function of temperature and band-gap offset, which is subsequently related to doping concentration. This model confirms a loss in electrical conductivity due to charge carriers gaining enough kinetic energy to overcome the QW barrier, which results in multilayer hopping across well–barrier interfaces. In addition, film microstructure and interface roughness have been determined by x-ray and spectroscopy techniques.

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Authors and Affiliations

  1. College of Nanoscale Science and Engineering, University at Albany, State University of New York, 257 Fuller Road, Albany, NY, 12203, USA

    Sean Teehan, Harry Efstathiadis & Pradeep Haldar

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  1. Sean Teehan
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  2. Harry Efstathiadis
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  3. Pradeep Haldar
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Correspondence to Sean Teehan.

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Teehan, S., Efstathiadis, H. & Haldar, P. Thermoelectric Performance of ZnO:Al/ZnO:(Al,In) Quantum Well Multilayer Structures as a Function of Indium Composition and Band-Gap Offset at High Operating Temperatures. J. Electron. Mater. 41, 1831–1837 (2012). https://doi.org/10.1007/s11664-012-2084-8

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  • DOI: https://doi.org/10.1007/s11664-012-2084-8

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