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Electrical Switching in TlSbSe2 Chalcogenide Semiconductors

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Abstract

Electrical measurements were performed on TlSbSe2 ternary crystals in the temperature range 293–413 K. The obtained I–V characteristics consist of two regions: an Ohmic region at low current densities, and nonlinear regions having negative differential resistance (NDR) at moderate and higher current densities. The nonlinear behavior of the I–V curves was studied at different ambient temperatures. The sample temperature and the threshold voltage of the NDR region were also examined as a function of the ambient temperature. We detected that the investigated samples exhibit threshold-type switching and propose that the switching mechanism has an electronic origin.

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Authors and Affiliations

  1. Physics Department, Science Faculty, İstanbul University, 34459 Vezneciler, İstanbul, Turkey

    N. Kalkan, S. Yildirim, K. Ulutas & D. Deger

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  1. N. Kalkan
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  2. S. Yildirim
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  3. K. Ulutas
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  4. D. Deger
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Correspondence to S. Yildirim.

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Kalkan, N., Yildirim, S., Ulutas, K. et al. Electrical Switching in TlSbSe2 Chalcogenide Semiconductors. J. Electron. Mater. 37, 157–160 (2008). https://doi.org/10.1007/s11664-007-0318-y

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  • DOI: https://doi.org/10.1007/s11664-007-0318-y

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