Abstract
We demonstrate a thin, selectively lateral-etched, AlIn(Ga)As tunnel-junction (TJ) layer as a current and optical confinement aperture in the InP-based long-wavelength vertical cavity surface-emitting lasers (VCSELs). A high etch selectivity was demonstrated by etching the aperture a distance of several microns without affecting the surrounding InP etch-resistant layer. Edgeemitting lasers enclosing the TJ aperture showed high injection efficiency and low current spreading underneath the aperature. Single-mode continuous-wave operation of a 1.55-μm VCSEL was demonstrated successfully with a room-temperature differential efficiency of 21% using a 6-μm-wide TJ aperature.
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Reddy, M.H.M., Feezell, D., Asano, T. et al. Selectively etched tunnel junction for lateral current and optical confinement in InP-based vertical cavity lasers. J. Electron. Mater. 33, 118–122 (2004). https://doi.org/10.1007/s11664-004-0280-x
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DOI: https://doi.org/10.1007/s11664-004-0280-x