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The effect of O2 ambient annealing on the microstructure of Cu(Mg) in the form of a Cu(Mg)/SiO2/Si multilayer

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Abstract

The effect of annealing in an O2 ambient on Cu(Mg)/SiO2/Si multilayer films was investigated. As-deposited Cu(Mg)/SiO2/Si multilayer samples with film thicknesses in the 1,000–3,000 Å range were annealed for 30 min in oxygen ambients at pressures ranging from vacuum to 100 mtorr. The results showed that annealing in an 8-mtorr O2 ambient significantly decreased the electrical resistivity of a 1,000 Å sample from 10.5 µΩ-cm to 3.7 µΩ-cm. Annealing in the O2 ambient enhanced Mg diffusion to the surface in comparison to vacuum annealing. Furthermore, O2 ambient annealing leads to excessive grain growth. However, the effect of O2 ambient annealing on resistivity is less when the thickness of the film increases.

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References

  1. N. Awaya and Y. Arita, J. Electron. Mater. 21, 959 (1992).

    CAS  Google Scholar 

  2. A. Jain, T.T. Kodas, R. Jairath, and M.J. Hampden-Smith, J. Vac. Sci. Technol. B 11, 2107 (1993).

    Article  CAS  Google Scholar 

  3. J. Lin and M.C. Chen, Jpn. J. Appl. Phys. 38, 4863 (1999).

    Article  CAS  Google Scholar 

  4. S.P. Murarka and S. Hymes, Solid State Mater. Sci. 20, 87 (1995).

    CAS  Google Scholar 

  5. Y.J. Park, V.K. Andleigh, and C.V. Thompson, J. Appl. Phys. 85, 3546 (1999).

    Article  CAS  Google Scholar 

  6. C. Whitman, M.M. Moslehi, A. Paranjpe, L. Velo, and T. Omstead, J. Vac. Sci. Technol. A 17, 1893 (1999).

    Article  CAS  Google Scholar 

  7. R. Liu, C.S. Pai, and E. Martinez, Solid State Electron. 43, 1003 (1999).

    Article  CAS  Google Scholar 

  8. X.W. Lin and D. Pramanlk, Solid State Technol. p. 63 (1998).

  9. P.J. Ding, W. Wang, W.A. Lanford, S. Hymes, and S.P. Murarka, Appl. Phys. Lett. 65, 1778 (1994).

    Article  CAS  Google Scholar 

  10. H. Itow, Y. Nakasaki, G. Minamihaba, K. Suguro, and H. Okano, Appl. Phys. Lett. 63, 934 (1993).

    Article  CAS  Google Scholar 

  11. W.A. Lanford, P.J. Ding, W. Wang, S. Hymes, and S.P. Murarka, Thin Solid Films 262, 234 (1995).

    Article  CAS  Google Scholar 

  12. P.J. Ding, W.A. Lanford, S. Hymes, and S.P. Murarka, J. Appl. Phys. 74, 1331 (1993).

    Article  CAS  Google Scholar 

  13. S. Hymes, S.P. Murarka, S. Shepard, and W.A. Lanford, J. Appl. Phys. 71, 4623 (1992).

    Article  CAS  Google Scholar 

  14. J. Li, J.W. Mayer, and E.G. Colgan, J. Appl. Phys. 70, 2820 (1991).

    Article  CAS  Google Scholar 

  15. P.J. Ding, W.A. Lanford, S. Hymes, and S.P. Murarka, J. Appl. Phys. 75, 3627 (1994).

    Article  CAS  Google Scholar 

  16. P.J. Ding, W.A. Lanford, S. Hymes, and S.P. Murarka, Appl. Phys. Lett. 64, 2897 (1994).

    Article  CAS  Google Scholar 

  17. C. Cabral, J.M. Harper, K. Holloway, D.A. Smith, and R.G. Schad, J. Vac. Sci. Technol. A 10, 1706 (1992).

    Article  CAS  Google Scholar 

  18. W.H. Lee et al., J. Electrochem. Soc. 147, 3066 (2000).

    Article  CAS  Google Scholar 

  19. W.H. Lee et al., J. Vac. Sci. Technol. 18, 2972 (2000).

    Article  CAS  Google Scholar 

  20. W.H. Lee et al., Appl. Phys. Lett. 77, 2192 (2000).

    Article  CAS  Google Scholar 

  21. W.H. Lee et al., Jpn. J. Appl. Phys. 40, 2408 (2000).

    Article  Google Scholar 

  22. J.M.E. Harper and K.P. Rodbell, J. Vac. Sci. Technol. B 15, 763 (1997).

    Article  CAS  Google Scholar 

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  1. W. H. Lee

    Present address: Department of Advanced Materials Engineering, Sejong University, 143-747, Seoul, Korea

Authors and Affiliations

  1. School of Metallurgical and Materials Engineering, Kookmin University, 132-702, Seoul, Korea

    W. H. Lee, Y. K. Ko, B. J. Kang, B. S. Cho, H. J. Yang & J. G. Lee

  2. R&D Center, LG Philips LCD, 431-080, Kyonggi-Do, Korea

    G. S. Chae & H. S. Soh

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  1. W. H. Lee
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  2. Y. K. Ko
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  3. B. J. Kang
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  4. B. S. Cho
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  8. J. G. Lee
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Lee, W.H., Ko, Y.K., Kang, B.J. et al. The effect of O2 ambient annealing on the microstructure of Cu(Mg) in the form of a Cu(Mg)/SiO2/Si multilayer. J. Electron. Mater. 31, 857–860 (2002). https://doi.org/10.1007/s11664-002-0195-3

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  • DOI: https://doi.org/10.1007/s11664-002-0195-3

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