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Observation of electron weak localization and correlation effects in disordered graphene

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Abstract

We have studied the electron transport properties of a disordered graphene sample, where the disorder was intentionally strengthened by Ga+ ion irradiation. The magneto-conductance of the sample exhibits a typical two-dimensional electron weak localization behavior, with electron-electron interaction as the dominant dephasing mechanism. The absence of electron anti-weak localization in the sample implies strong intersublattice and/or intervalley scattering caused by the disorders. The temperature and bias-voltage dependencies of conductance clearly reveal the suppression of conductance at low energies, indicating opening of a Coulomb gap due to electron-electron interaction in the disordered graphene sample.

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Authors and Affiliations

  1. Daniel Chee Tsui Laboratory, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    ChangLing Tan, ZhenBing Tan, Li Ma, FanMing Qu, Fan Yang, Jun Chen, GuangTong Liu, ChangLi Yang & Li Lu

  2. Laboratory of Microfabrication, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    HaiFang Yang

Authors
  1. ChangLing Tan
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  2. ZhenBing Tan
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  3. Li Ma
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  4. FanMing Qu
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  5. Fan Yang
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  6. Jun Chen
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  7. GuangTong Liu
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  8. HaiFang Yang
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  9. ChangLi Yang
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  10. Li Lu
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Corresponding authors

Correspondence to ChangLi Yang or Li Lu.

Additional information

Supported by the National Natural Science Foundation of China (Grant Nos. 10774172 and 10874220), and the National Basic Research Program of China from the MOST (Grant No. 2006CB921304)

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Tan, C., Tan, Z., Ma, L. et al. Observation of electron weak localization and correlation effects in disordered graphene. Sci. China Ser. G-Phys. Mech. Astron. 52, 1293–1298 (2009). https://doi.org/10.1007/s11433-009-0187-x

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  • DOI: https://doi.org/10.1007/s11433-009-0187-x

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