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Oxidation of Ti3SiC2 between 900 and 1200 °C in Air

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Abstract

Ti3SiC2 materials were synthesized by hot pressing using a new starting-material system consisting of a TiCx(x=0.6)/Si powder mixture. The oxidation of Ti3SiC2 at temperatures between 900 and 1200 °C in air for up to 100 h resulted in the formation of an outer TiO2 layer, an intermediate SiO2-rich layer and an inner (TiO2 + SiO2) mixed layer. During oxidation, Ti diffused outwards to form the outer TiO2 layer, and oxygen transported inwards to form the inner (TiO2 + SiO2) mixed layer. At the same time, the carbon in Ti3SiC2 escaped into the air. Below the scale, there was a narrow oxygen-affected zone, The oxidation at the scale-matrix interface proceeded by the disintegration of the lamellar Ti3SiC2 grains to form crystallites with a size of a few tens of nanometers containing oxygen. The detailed scale characteristics and oxidation mechanism are described.

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Acknowledgments

This work was supported by a grant (no. R-11-2000-086-0000-0) from the Center of Excellency Program of the KOSEF, and by a grant (no. 05K1501-00610) from “Center for Nano Structured Materials Technology” under: 21st Century Frontier R&D Program” of the MOST, Korea.

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Authors and Affiliations

  1. Center for Advanced Plasma Surface Technology, Sungkyunkwan University, Suwon, 440-746, South Korea

    D. B. Lee

  2. Multifunctional Ceramic Research Center, KIST, Seoul, 136-791, South Korea

    S. W. Park

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  1. D. B. Lee
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  2. S. W. Park
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Correspondence to D. B. Lee.

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Lee, D.B., Park, S.W. Oxidation of Ti3SiC2 between 900 and 1200 °C in Air. Oxid Met 67, 51–66 (2007). https://doi.org/10.1007/s11085-006-9043-9

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