Abstract
In this paper, we theoretically investigate intersubband absorption in La-doped BaSnO3/BaO perovskite-oxide double and triple symmetrical quantum wells. The goal is to assess the emerging possibilities offered by perovskite heterostructures for realization of oxide-based quantum well optoelectronic devices. Properties such as small electron effective mass, very high room-temperature mobility of BaSnO3, large conduction band offset between the two materials, are all promising for technological applications. Some of the possible applications include active n-channel materials in p-n junctions, field-effect transistors, ferroelectric field-effect transistors, sensitive UV photoconductors, and electron transport layers in perovskite solar cells. We are interested in tuning of the absorption spectra via quantum well width modulation, changing of doping density and variation of external electric field along the growth direction which is important for application in electro-optical light modulators. The electronic structure is calculated self-consistently by solving the Schrödinger–Poisson system of equations where the exchange correlation effects are also taken into the account.
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This work was supported by Ministry of Education, Science and Technological Development (Republic of Serbia).
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All authors contributed to the study conception and design. Material preparation, data collection and analysis were performed by all authors. The first draft of the manuscript was written by Novak Stanojević and all the authors contributed in finalizing the previous versions of the manuscript. All authors have read and approved the submitted version of the manuscript.
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Stanojević, N., Vuković, N. & Radovanović, J. Calculation of intersubband absorption in n-doped BaSnO3 quantum wells. Opt Quant Electron 55, 383 (2023). https://doi.org/10.1007/s11082-023-04656-5
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DOI: https://doi.org/10.1007/s11082-023-04656-5