Abstract
Optical transitions and electronic properties of epitaxial InAs quantum dots (QDs) grown with and without InGaAs strain-relieving capping layer within GaAs/AlAs quantum well (QW) are investigated. Modulated reflectance and photoluminescence spectroscopy is used to probe the QD- and QW-related interband optical transitions over the temperature range of 3–300 K. The observed spectral features in QDs are identified using numerical calculations in a framework of 8-band \(k\cdot p\) method. It is found that covering the dots by a 5 nm-thick InGaAs layer yields the energy red-shift of ground-state transition by \({\sim }150\,{\text{ meV}}\). Moreover, the analysis of interband transition energy dependence on temperature using Varshni expression shows that material composition of InAs QDs significantly changes due to Ga/In interdiffusion. A comparison of emission- and absorption-type spectroscopy applied for InAs–GaAs QDs indicates a Stokes shift of \({\sim }0.02\,{\text{ meV}}\) above 150 K temperature.
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This article is part of the Topical Collection on Advances in the science of light.
Guest Edited by Jelena Radovanovic, Milutin Stepić, Mikhail Sumetsky, Mauro Pereira and Dragan Indjin.
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Rimkus, A., Pozingytė, E., Nedzinskas, R. et al. Temperature-dependent modulated reflectance and photoluminescence of InAs–GaAs and InAs–InGaAs–GaAs quantum dot heterostructures. Opt Quant Electron 48, 202 (2016). https://doi.org/10.1007/s11082-016-0446-9
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DOI: https://doi.org/10.1007/s11082-016-0446-9