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Microwave Conductivity in Two-Band Superconductors V\(_{\mathbf {3 + x}}\mathop {\mathbf Si}_{\mathbf {1 - x}}\)

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Abstract

We present the results of investigations of the temperature dependences of complex conductivity σ(T) = σ (T)−i σ (T) at frequency 9.4 GHz in series of single crystals V3+x Si1−x with different Si content. The data exhibit peculiarities typical for multiband superconductors, namely a nonlinear temperature dependence of resistivity above superconducting transition temperature T c , suppression of superconducting transition temperature T c by nonmagnetic impurities, a positive curvature of σ (T) curves close to T c , and a coherence peak in σ (T) at TT c /2. Using a two-band model in the weak-coupling regime, we demonstrate that the behavior of T c and the evolution of σ(T) with Si-content variation are consistently described by changing of the interband scattering rate.

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Acknowledgments

We would like to thank V.A. Marchenko for producing V3+x Si1−x crystals. Helpful discussions with I.I. Mazin are gratefully acknowledged. This work was supported by megagrant no.14Y26.31.0007 funded by Russian Ministry of Education and Science and in part by RFBR grant no.12-02-01009 and Dutch FOM.

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Correspondence to Mikhail R. Trunin.

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Dolgov, O.V., Golubov, A.A., Nefyodov, Y.A. et al. Microwave Conductivity in Two-Band Superconductors V\(_{\mathbf {3 + x}}\mathop {\mathbf Si}_{\mathbf {1 - x}}\) . J Supercond Nov Magn 28, 331–337 (2015). https://doi.org/10.1007/s10948-014-2700-3

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