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Ferromagnetic Resonance Study of Ga1−x Mn x As Fabricated on (311) GaAs Wafers by Mn Ion Implantation and Pulsed-Laser Melting

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Abstract

We present a ferromagnetic resonance (FMR) study of Ga1−x Mn x As fabricated by Mn ion implantation (II) into (311) GaAs wafers followed by pulsed-laser melting (PLM). We measured the angular dependence of FMR at 4 K, and the data were then fitted by Stoner–Wohlfarth model to obtain the cubic and uniaxial anisotropy parameters. The observed angular behavior of FMR can be understood in terms of two contributions: a cubic anisotropy field parallel to the 〈001〉 axes, and a uniaxial anisotropy field parallel to the [311] direction. Our results show that the magnetic anisotropy fields in II-PLM (Ga,Mn)As are fundamentally similar to those in Ga1−x Mn x As samples grown by molecular beam epitaxy (MBE), indicating that the two different growth methods lead to materials with very similar magnetic properties.

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Author notes

  1. Y. Y. Zhou

    Present address: University of Notre Dame, 225 Nieuwland Science Hall, Notre Dame, IN, 46556, USA

Authors and Affiliations

  1. Department of Physics, University of Notre Dame, Notre Dame, IN, 46556, USA

    Y. Y. Zhou, X. Liu & J. K. Furdyna

  2. Department of Materials Science & Engineering, University of California at Berkeley, and Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    M. A. Scarpulla & O. D. Dubon

Authors
  1. Y. Y. Zhou
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  2. X. Liu
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  3. J. K. Furdyna
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  4. M. A. Scarpulla
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  5. O. D. Dubon
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Correspondence to Y. Y. Zhou.

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Zhou, Y.Y., Liu, X., Furdyna, J.K. et al. Ferromagnetic Resonance Study of Ga1−x Mn x As Fabricated on (311) GaAs Wafers by Mn Ion Implantation and Pulsed-Laser Melting. J Supercond Nov Magn 23, 87–90 (2010). https://doi.org/10.1007/s10948-009-0539-9

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  • DOI: https://doi.org/10.1007/s10948-009-0539-9

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