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Fluctuator Model of Memory Dip in Hopping Insulators

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Abstract

We show that the non-equilibrium dynamic in two-dimensional hopping insulators close to metal-dielectric transition is sensitive to electric fields confinement inside the sample, which leads to a nearly thermally activated conductance behavior and a strong non-equilibrium conductance response to the gate voltage, including a memory dip in a field dependence of conductance.

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Acknowledgements

This work is supported by the Tulane Research and Enhancement Fund and in part by the National Science Foundation under Grant No. NSF PHYS05-51164. The current work is funded by the NSF EPSCoR LA-SiGMA project under awards #EPS-1003897 and PREM DMR-0934111. Authors are grateful for many useful discussions and suggestions with Christian Enss, Zvi Ovadyahu, Thierry Grenet, Boris Shklovskii, Alexei Efros during their visit to the International workshop “Electronic Glasses” in the Kavli Institute of Theoretical Physics (August, 2010) and one of them (ab) acknowledges Zvi Ovadyahu for his hospitality and stimulating discussion during his visit to the Hebrew University of Jerusalem (Israel, January, 2011).

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  1. Department of Chemistry, Tulane University, New Orleans, LA, 70118, USA

    Alexander L. Burin & Arkady K. Kurnosov

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  1. Alexander L. Burin
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  2. Arkady K. Kurnosov
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Correspondence to Alexander L. Burin.

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Burin, A.L., Kurnosov, A.K. Fluctuator Model of Memory Dip in Hopping Insulators. J Low Temp Phys 167, 318–328 (2012). https://doi.org/10.1007/s10909-012-0466-1

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