Abstract
The conductance measurements of the non-annealed (D1) and 400 °C annealed (D2) Ni/n-GaP/Al diodes were made over a wide frequency range of (10 kHz to 5 MHz) and temperature of (100–320 K with steps of 20 K) with bias voltage as a parameter. The capacitance and conductance measurement method is one of the most popular non-destructive methods to obtain information about metal–semiconductor (MS) diode interfaces. The interface state density distribution curves were determined over the band-gap energy near the semiconductor energy midgap. The interface state density (Dit) has been seen to be of the order of ∼1012 eV−1 cm−2. The Dit∼T curves have been plotted for different values of bias voltage. The value of Dit increased with increasing measurement temperature, and with increasing voltage from negative bias to positive bias voltage for both diodes. It was seen that the Dit value for D2 diode was greater than that for the D1 diode at each measurement temperature and bias voltage. It was seen in the interface state energy distribution or density distribution curves that the value of Dit has increased from the valence band maximum (Ev) towards conduction band minimum (Ec) at each measurement temperature.
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T.E. Zipperian, R.J. Chaffin, R. Dawson, Recent advances in gallium phosphide junction devices for high-temperature electronic applications. High-Temp. Electron. (1998). https://doi.org/10.1109/9780470544884.ch55
M.M. Sobolev, V.G. Nikitin, High-temperature diode formed by epitaxial GaP layers. Tech. Phys. Lett. 24, 329–331 (1998). https://doi.org/10.1134/1.1262110
H. Saghrouni, S. Jomni, W. Belgacem, N. Hamdaoui, L. Beji, Physical and electrical characteristics of metal/Dy2O3/p-GaAs structure. Phys. B 444, 58–64 (2014). https://doi.org/10.1016/j.physb.2014.03.030
R. Marnadu, J. Chandrasekaran, M. Raja, M. Balaji, S. Maruthamuthu, P. Balraju, Influence of metal work function and incorporation of Sr atom on WO3 thin films for MIS and MIM structured SBDs. Superlattices Microstruct. 119, 134–149 (2018). https://doi.org/10.1016/j.spmi.2018.04.049
R. Marnadu, J. Chandrasekaran, M. Raja, M. Balaji, V. Balasubramani, Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WOx) films and its MIS structure of Cu/Zr–WOx/p-Si Schottky barrier diodes. J. Mater. Sci. 29, 2618–2627 (2018). https://doi.org/10.1007/s10854-017-8187-5
N. Shiwakoti, A. Bobby, K. Asokan, B. Antony, Temperature dependent dielectric studies of Ni/n-GaP Schottky diodes by capacitance and conductance measurements. Mater. Sci. Semicond. Process. 42, 378–382 (2016). https://doi.org/10.1016/j.mssp.2015.11.010
N. Shiwakoti, A. Bobby, K. Asokan, B. Antony, Microelectronics reliability the role of electronic energy loss in SHI irradiated Ni/oxide/n-GaP Schottky diode. Microelectron. Reliab. 69, 40–46 (2017). https://doi.org/10.1016/j.microrel.2016.12.005
N. Shiwakoti, A. Bobby, K. Asokan, B. Antony, Interface and transport properties of gamma irradiated Au/n-GaP Schottky diode. Mater. Sci. Semicond. Process. 74, 1–6 (2018). https://doi.org/10.1016/j.mssp.2017.10.008
S.S. Fouad, G.B. Sakr, I.S. Yahia, D.M. Abdel-Basset, F. Yakuphanoglu, Impedance spectroscopy of p-ZnGa2Te4/n-Si nano-HJD. Phys. B 415, 82–91 (2013). https://doi.org/10.1016/j.physb.2013.01.014
Z. Çaldiran, A.R. Deniz, F. Mehmet Coşkun, Ş Aydoǧan, A. Yeşildaǧ, D. Ekinci, I-V-T (current-voltage-temperature) characteristics of the Au/Anthraquinone/p-Si/Al junction device. J. Alloy. Compd. 584, 652–657 (2014). https://doi.org/10.1016/j.jallcom.2013.09.006
P. Harishsenthil, J. Chandrasekaran, R. Marnadu, P. Balraju, C. Mahendarn, Influence of high dielectric HfO2 thin films on the electrical properties of Al/HfO2/n-Si (MIS) structured Schottky barrier diodes. Phys. B 594, 412336 (2020)
H.G. Çetinkaya, M. Yıldırım, P. Durmuş, S. Altındal, Diode-to-diode variation in dielectric parameters of identically prepared metal-ferroelectric-semiconductor structures. J. Alloy. Compd. 728, 896–901 (2017). https://doi.org/10.1016/j.jallcom.2017.09.030
Z. Ouennoughi, A. Sellai, MIS tunnel admittance with an inhomogeneous dielectric. Int. J. Electron. 83, 571–580 (1997). https://doi.org/10.1080/002072197135148
P. Vivek, J. Chandrasekaran, R. Marnadu, S. Maruthamuthu, V. Balasubramani, Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diodes. Superlattices Microstruct. 133, 106197 (2019). https://doi.org/10.1016/j.spmi.2019.106197
R. Marnadu, J. Chandrasekaran, S. Maruthamuthu, V. Balasubramani, P. Vivek, R. Suresh, Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application. Appl. Surf. Sci. 480, 308–322 (2019). https://doi.org/10.1016/j.apsusc.2019.02.214
S. Alptekin, Ş Altındal, A comparative study on current/capacitance: voltage characteristics of Au/n-Si (MS) structures with and without PVP interlayer. J. Mater. Sci. 30, 6491–6499 (2019). https://doi.org/10.1007/s10854-019-00954-5
A. Buyukbas-Uluşan, S.A. Yerişkin, A. Tataroğlu, M. Balbaşı, Y.A. Kalandaragh, Electrical and impedance properties of MPS structure based on (Cu2O–CuO–PVA) interfacial layer. J. Mater. Sci. 29, 8234–8243 (2018). https://doi.org/10.1007/s10854-018-8830-9
A. Sellai, Z. Ouennoughi, Analysis of frequency- and temperature-dependent interface states in PtSi/p-Si Schottky diodes. Mater. Sci. Eng. B 154–155, 179–182 (2008). https://doi.org/10.1016/j.mseb.2008.09.048
H. Dogan, Y. Nezir, İ Orak, S. Elagöz, A. Turut, Capacitance-conductance-frequency characteristics of Au/Ni/n-GaN/undoped GaN structures. Phys. B 457, 48–53 (2015). https://doi.org/10.1016/j.physb.2014.09.033
E. Arslan, S. Bütün, Y. Şafak, H. Çakmak, H. Yu, E. Özbay, Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes. Microelectron. Reliab. 51, 576–580 (2011). https://doi.org/10.1016/j.microrel.2010.09.017
A. Turut, H. Doğan, N. Yıldırım, The interface state density characterization by temperature-dependent capacitance–conductance–frequency measurements in Au/Ni/n-GaN structures. Mater. Res. 2, 096304 (2015). https://doi.org/10.1088/2053-1591/2/9/096304
A.M. Cowley, S.M. Sze, Surface states and barrier height of metal-semiconductor systems. J. Appl. Phys. 36, 3212–3220 (1965). https://doi.org/10.1063/1.1702952
P. Kordoš, R. Stoklas, D. Gregušová, Š Gaži, J. Novák, Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements. Appl. Phys. Lett. 96, 2010–2013 (2010). https://doi.org/10.1063/1.3275754
A. Cherif, S. Jomni, W. Belgacem, R. Hannachi, N. Mliki, L. Beji, Investigation of structural properties, electrical and dielectrical characteristics of Al/Dy2O3/porous Si heterostructure. Superlattices Microstruct. 68, 76–89 (2014). https://doi.org/10.1016/j.spmi.2014.01.010
Z. Chen, D.G. Park, F. Stengal, S.N. Mohammad, H. Morkoç, Metal-insulator-semiconductor structures on p-type GaAs with low interface state density. Appl. Phys. Lett. 69, 230–232 (1996). https://doi.org/10.1063/1.117933
D.G. Park, D.M. Diatezua, Z. Chen, S.N. Mohammad, H. Morkoç, Characteristics of Si3N4/Si/n-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate. Appl. Phys. Lett. 69, 3025–3027 (1996). https://doi.org/10.1063/1.116827
R. Padma, K. Sreenu, V. Rajagopal Reddy, Electrical and frequency dependence characteristics of Ti/polyethylene oxide (PEO)/p-type InP organic-inorganic Schottky junction. J. Alloys Compd. 695, 2587–2596 (2017). https://doi.org/10.1016/j.jallcom.2016.11.165
R. Marnadu, J. Chandrasekaran, S. Maruthamuthu, P. Vivek, V. Balasubramani, P. Balraju, Jet nebulizer sprayed WO3-nanoplate arrays for high-photoresponsivity based metal–insulator–semiconductor structured Schottky barrier diodes. J. Inorg. Organomet. Polym Mater. 30, 731–748 (2020). https://doi.org/10.1007/s10904-019-01285-y
K. Ejderha, I. Orak, S. Duman, A. Turut, The effect of thermal annealing and measurement temperature on interface state density distribution and time constant in Ni/n-GaP rectifying contacts. J. Electron. Mater. 47, 3502–3509 (2018). https://doi.org/10.1007/s11664-018-6192-y
E.H. Nicollian, A. Goetzberger, The Si-SiO, interface—electrical properties as determined by the metal-insulator-silicon conductance technique. Bell Syst. Tech. J. 46(6), 1055–1033 (1967). https://doi.org/10.1002/j.1538-7305.1967.tb01727.x
V. Kumar, N. Kaminski, A.S. Maan, J. Akhtar, Capacitance roll-off and frequency-dispersion capacitance-conductance phenomena in field plate and guard ring edge-terminated Ni/SiO2/4H-nSiC Schottky barrier diodes. Phys. Status Solidi A 213, 193–202 (2016). https://doi.org/10.1002/pssa.201532454
S. Kar, S. Varma, Determination of silicon-silicon dioxide interface state properties from admittance measurements under illumination. J. Appl. Phys. 58, 4256–4266 (1985). https://doi.org/10.1063/1.335561
M. Kuhn, A quasi-static technique for MOS C-V and surface state measurements. Solid State Electron. 13, 873–885 (1970). https://doi.org/10.1016/0038-1101(70)90073-0
K.K. Hung, Y.C. Cheng, Characterization of Si-SiO2 interface traps in p-metal-oxide-semiconductor structures with thin oxides by conductance technique. J. Appl. Phys. 62, 4204–4211 (1987). https://doi.org/10.1063/1.339091
S.S. Fouad, G.B. Sakr, I.S. Yahia, D.M. Abdel-Basset, F. Yakuphanoglu, Capacitance and conductance characterization of nano-ZnGa 2Te4/n-Si diode. Mater. Res. Bull. 49, 369–383 (2014). https://doi.org/10.1016/j.materresbull.2013.08.065
H.C. Card, E.H. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D 4, 1589–1601 (1971)
M. Missous, E.H. Rhoderick, D.A. Woolf, S.P. Wilkes, On the Richardson constant of intimate metal-GaAs Schottky barriers. Semicond. Sci. Technol. 7, 218–221 (1992). https://doi.org/10.1088/0268-1242/7/2/007
M. Missous, E.H. Rhoderick, K.E. Singer, Thermal stability of epitaxial Al/GaAs Schottky barriers prepared by molecular-beam epitaxy. J. Appl. Phys. 59, 3189–3195 (1986). https://doi.org/10.1063/1.336900
L. Dasaradha Rao, V. Rajagopal Reddy, V. Janardhanam, M.S. Kang, B.C. Son, C.J. Choi, Electrical and structural properties of rapidly annealed rare-earth metal Er Schottky contacts on p-type InP. Superlattices Microstruct. 65, 206–218 (2014). https://doi.org/10.1016/j.spmi.2013.10.043
M. Çakar, N. Yildirim, Ş Karataş, C. Temirci, A. Türüt, Current-voltage and capacitance-voltage characteristics of Sn/rhodamine- 101n-Si and Sn/rhodamine- 101p-Si Schottky barrier diodes. J. Appl. Phys. 100, 7–12 (2006). https://doi.org/10.1063/1.2355547
A. Türüt, On current-voltage and capacitance-voltage characteristics of metal-semiconductor contacts. Turk. J. Phys. 44, 302–347 (2020). https://doi.org/10.3906/fiz-2007-11
P. Horley, Y.V. Vorobiev, V.P. Makhniy, V.M. Sklyarchuk, Optoelectronic properties of Ni–GaP diodes with a modified surface. Phys. E 83, 227–231 (2016)
D. McIntosh, Q. Zhou, Y. Chen, J.C. Campbell, High quantum efficiency GaP avalanche photodiodes. Opt. Express 19, 19607 (2011). https://doi.org/10.1364/oe.19.019607
T.F. Lei, C.L. Lee, C.Y. Chang, Metal/n-Gap Schottky barrier heights. Solid State Electron. 22, 1035–1037 (1979). https://doi.org/10.1016/0038-1101(79)90007-8
A. Kocyigit, M. Yıldırım, A. Sarılmaz, F. Ozel, The Au/Cu2WSe4/p–Si photodiode: electrical and morphological characterization. J. Alloys Compd. 780, 186–192 (2019). https://doi.org/10.1016/j.jallcom.2018.11.372
D.E. Yildiz, Ş Altindal, H. Kanbur, Gaussian distribution of inhomogeneous barrier height in Al/SiO2/p-Si Schottky diodes. J. Appl. Phys. 103, 08 (2008). https://doi.org/10.1063/1.2936963
O. Kahveci, A. Akkaya, E. Ayyildiz, A. Türüt, Comparison of the Ti/n-GaAs Schottky contacts’ parameters fabricated using Dc magnetron sputtering and thermal evaporation. Surf. Rev. Lett. 24, 1–9 (2017). https://doi.org/10.1142/S0218625X17500470
M.E. Aydín, K. Akkílíç, T. Kilicoglu, The importance of the neutral region resistance for the calculation of the interface state in Pb/p-Si Schottky contacts. Phys. B 352, 312–317 (2004). https://doi.org/10.1016/j.physb.2004.08.003
M. Raj, C. Joseph, M. Subramanian, V. Perumalsamy, V. Elayappan, Superior photoresponse MIS Schottky barrier diodes with nanoporous:Sn-WO3 films for ultraviolet photodetector application. New J. Chem. 44, 7708–7718 (2020). https://doi.org/10.1039/d0nj00101e
H.C. Card, E.H. Rhoderick, Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodes. J. Phys. D 4, 1589–1601 (1971). https://doi.org/10.1088/0022-3727/4/10/319
S.K. Cheung, N.W. Cheung, Extraction of Schottky diode parameters from forward current-voltage characteristics. Appl. Phys. Lett. 49, 85–87 (1986). https://doi.org/10.1063/1.97359
M.S.P. Reddy, P. Puneetha, V.R. Reddy, J. Lee, S. Jeong, C. Park, Temperature-dependent electrical properties and carrier transport mechanisms of TMAH-treated Ni/Au/Al2O3/GaN MIS diode. J. Electron. Mater. 45, 5655–5662 (2016). https://doi.org/10.1007/s11664-016-4809-6
M. Nathan, Z. Shoshani, G. Ashkinazi, B. Meyler, O. Zolotarevski, On the temperature dependence of the barrier height and the ideality factor in high voltage Ni/nGaAs Schottky diodes. Solid-State Electron. 39(10), 1457–1462 (1996). https://doi.org/10.1016/0038-1101(96)00060-3
R.T. Tung, Recent advances in Schottky barrier concepts. Mater. Sci. Eng. R 35, 1–138 (2001). https://doi.org/10.1016/S0927-796X(01)00037-7
H. Norde, A modified forward I-V plot for Schottky diodes with high series resistance. J. Appl. Phys. 50, 5052–5053 (1979). https://doi.org/10.1063/1.325607
K. Sato, Y. Yasumura, Study of forward I-V plot for Schottky diodes with high series resistance. J. Appl. Phys. 58, 3655–3657 (1985). https://doi.org/10.1063/1.335750
S. Alptekin, S.O. Tan, S. Altindal, Determination of surface states energy density distributions and relaxation times for a metal-polymer-semiconductor structure. IEEE Trans. Nanotechnol. 18, 1196–1199 (2019). https://doi.org/10.1109/TNANO.2019.2952081
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Duman, S., Ejderha, K., Orak, I. et al. Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode. J Mater Sci: Mater Electron 31, 21260–21271 (2020). https://doi.org/10.1007/s10854-020-04638-3
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DOI: https://doi.org/10.1007/s10854-020-04638-3