Abstract
Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO2 substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH3 gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH3 gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH3 gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively.
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Sarf, F., Karaduman Er, I., Yakar, E. et al. The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature. J Mater Sci: Mater Electron 31, 10084–10095 (2020). https://doi.org/10.1007/s10854-020-03554-w
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DOI: https://doi.org/10.1007/s10854-020-03554-w