Skip to main content
SpringerLink
Log in

Electrical characterization of silicon nitride interlayer-based MIS diode

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

In this study, silicon nitride (Si3N4) thin film on p-type GaAs wafer was deposited by RF magnetron sputtering. The surface morphology of Si3N4/GaAs structure was analyzed by atomic force microscopy (AFM). The electrical characteristics of the fabricated Au/Si3N4/p-GaAs metal–insulator-semiconductor (MIS) diode were investigated by using current–voltage (I–V) measurements at room temperature. The electronic parameters such as ideality factor (n) and barrier height (Φbo) of the MIS diode were derived using thermionic emission (TE). The Φbo was also extracted from Norde method. The barrier height values obtained from both TE and Norde were found to be in harmony with each other. The interface state density (Nss) and series resistance (Rs) parameters of the MIS diode were determined from the measured I–V data. In addition, the dominant current conduction mechanisms of the MIS diode were also investigated by forward bias ln(IF) − ln(VF) and reverse bias ln(IR) − VR0.5 plot. At high forward bias, the current conduction was associated with the space charge limited current (SCLC). At reverse bias region, the current conduction was associated with the Schottky emission (SE).

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7

Similar content being viewed by others

References

  1. S.M. Sze, Physics of Semiconductor Devices, 2nd edn. (Wiley, New York, 1981)

    Google Scholar 

  2. E.H. Rhoderick, R.H. Williams, Metal Semiconductor Contacts, 2nd edn. (Clarendon Press, Oxford, 1988)

    Google Scholar 

  3. R. Dalven, Introduction to Applied Solid State Physics, 2nd edn. (Plenum Press, New York, 1990)

    Book  Google Scholar 

  4. P. Stallinga, Electrical Characterization of Organic Electronic Materials and Devices (Wiley, Chichester, 2009)

    Book  Google Scholar 

  5. B.L. Sharma, Metal-Semiconductor Schottky Barrier Junctions and Their Applications (Plenum Press, New York, 1984)

    Book  Google Scholar 

  6. A. Tataroglu, Chin. Phys. B 22, 068402 (2013)

    Article  Google Scholar 

  7. A. Buyukbas-Ulusan, İ. Taşçıoğlu, A. Tataroğlu, F. Yakuphanoğlu, S. Altındal, J. Mater. Sci. Mater. Electron. 30, 12122–12129 (2019)

    Article  CAS  Google Scholar 

  8. K. Jhansirani, R.S. Dubey, M.A. More, S. Singh, Results Phys. 6, 1059–1063 (2016)

    Article  Google Scholar 

  9. D.M. Diatezua, Z. Wang, D. Park, Z. Chen, A. Rockett, H. Morkoc, J. Vac. Sci. Technol. B 16, 507–510 (1998)

    Article  CAS  Google Scholar 

  10. T. Carriere, B. Agius, I. Vickridge, J. Siejka, P. Alnot, J. Electrochem. Soc. 137, 1582–1587 (1990)

    Article  CAS  Google Scholar 

  11. A. Büyükbaş Uluşan, A. Tataroğlu, Y. Azizian-Kalandaragh, Ş. Altındal, J. Mater. Sci. Mater. Electron. 29, 159–170 (2018)

    Article  Google Scholar 

  12. S. Altındal Yerişkin, Mater. Sci. Mater. Electron. 30, 17032–17039 (2019)

    Article  Google Scholar 

  13. A. Kumar, A. Kumar, K.K. Sharma, S. Chand, Superlatt Microst. 128, 373–381 (2019)

    Article  CAS  Google Scholar 

  14. A. Tataroglu, S. Altındal, Y. Azizian-Kalandaragh, Phys. B 576, 411733 (2020)

    Article  CAS  Google Scholar 

  15. V. Rajagopal Reddy, C. Venkata Prasad, Mater. Sci. Eng. B 231, 74–80 (2018)

    Article  CAS  Google Scholar 

  16. K.H. Kong, R. Kek, T.Y. Tou, S.S. Yap, Microelectron. Eng. 213, 24–30 (2019)

    Article  CAS  Google Scholar 

  17. N. Kaymak, E. Efil, E. Seven, A. Tataroğlu, S. Bilge, E. Öz Orhan, Mater. Res. Express 6, 026309 (2019)

    Article  Google Scholar 

  18. A. Tataroğlu, C. Ahmedova, G. Barim, A.G. Al-Sehemi, A. Karabulut, A.A. Al-Ghamdi, W.A. Farooq, F. Yakuphanoglu, J. Mater. Sci. Mater. Electron. 29, 12561–12572 (2018)

    Article  Google Scholar 

  19. H. Norde, J. Appl. Phys. 50, 5052–5054 (1979)

    Article  CAS  Google Scholar 

  20. H.C. Card, E.H. Rhoderick, J. Phys. D Appl. Phys. 4, 1589–1601 (1971)

    Article  CAS  Google Scholar 

  21. A. Tataroglu, S. Altındal, Microelectron. Eng. 85, 233–237 (2008)

    Article  CAS  Google Scholar 

  22. S. Karatas, S. Altındal, A. Türüt, M. Çakar, Phys. B 392, 43–50 (2007)

    Article  CAS  Google Scholar 

  23. D. Zhang, S. Mao, G. Wang, J. Xu, X. Luo, C. Zhao, J. Li, W. Wang, D. Chen, T. Ye, J. Luo, Jpn. J. Appl. Phys. 58, SHHD01 (2019)

    Article  CAS  Google Scholar 

  24. C. Venkata Prasad, V. Rajagopal Reddy, C.-J. Choi, Appl. Phys. A 123, 279 (2017)

    Article  Google Scholar 

  25. G. Nagaraju, K. Ravindranatha Reddy, V. Rajagopal Reddy, J. Semicond. 38, 114001 (2017)

    Article  Google Scholar 

  26. Y. Badali, Y. Azizian-Kalandaragh, E.A. Akhlaghi, S. Altındal, J. Electron. Mater. 49, 444–453 (2019)

    Article  Google Scholar 

  27. I. Missoum, Y.S. Ocak, M. Benhaliliba, C.E. Benouis, A. Chaker, Synth. Met. 214, 76–81 (2016)

    Article  CAS  Google Scholar 

  28. H. Kim, H. Kim, D.-W. Kim, J. Korean Phys. Soc. 65, 751–756 (2014)

    Article  CAS  Google Scholar 

  29. T. Ben Jomaa, L. Beji, A. Ltaief, A. Bouazizi, Mater. Sci. Eng. C 26, 530–533 (2006)

    Article  CAS  Google Scholar 

  30. A. Tataroglu, A.A. Hendi, R.H. Alorainy, F. Yakuphanoglu, Chin. Phys. B 23, 057504 (2014)

    Article  Google Scholar 

  31. A. Buyukbas-Ulusan, S. Altındal-Yerişkin, A. Tataroğlu, J. Mater. Sci. Mater. Electron. 29, 16740–16746 (2018)

    Article  CAS  Google Scholar 

  32. A. Arshak, S. Zleetni, K. Arshak, Sensors 2, 174–184 (2002)

    Article  CAS  Google Scholar 

  33. V. Janardhanam, Y.-H. Kil, K.-H. Shim, V. Rajagopal Reddy, C.-J. Choi, Mater. Trans. 54, 1067–1072 (2013)

    Article  CAS  Google Scholar 

  34. K. Sreenu, C.V. Prasad, V. Rajagopal Reddy, J. Electron. Mater. 46, 5746–5754 (2017)

    Article  CAS  Google Scholar 

  35. L. Yong, W. Ling-Li, W. Xiao-Bo, Y. Ling-Ling, S. Li-Xia, T. Yong-Tao, L. Xin-Jian, Chin. Phys. B 23, 087307 (2014)

    Article  Google Scholar 

  36. A. Buyukbaş-Uluşan, A. Tataroğlu, Y. Azizian-Kalandaragh, M. Koşal, J. Mater. Sci. Mater. Electron. 30, 9572–9581 (2019)

    Article  Google Scholar 

Download references

Acknowledgements

This study was supported by Gazi University Scientific Research Project. (Project Number: GU-BAP.05/2019–26).

Author information

Authors and Affiliations

  1. Department of Physics, Faculty of Science, Gazi University, Ankara, Turkey

    A. Buyukbas-Ulusan & A. Tataroglu

Authors
  1. A. Buyukbas-Ulusan
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. A. Tataroglu
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to A. Tataroglu.

Additional information

Publisher's Note

Springer Nature remains neutral with regard to jurisdictional claims in published maps and institutional affiliations.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Buyukbas-Ulusan, A., Tataroglu, A. Electrical characterization of silicon nitride interlayer-based MIS diode. J Mater Sci: Mater Electron 31, 9888–9893 (2020). https://doi.org/10.1007/s10854-020-03533-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-020-03533-1

Search

Navigation