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Sr-doped yttrium nickel oxide-based photodetectors

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Abstract

In this research, Sr-doped yttrium nickel oxide-based photodetectors have been fabricated. The electrical properties of diodes have been analyzed by using Cheung and Norde methods. The ideality factors, barrier heights, and series resistances of diodes have been calculated under visible light at different irradiation intensities. In addition, the photoresponse behavior of photodetectors was investigated under visible light at different irradiation intensities. The highest responsivity (R) and detectivity (D*) were calculated as 25.34 mA/W and 7 × 84 1011 Jones, respectively. These results suggest that the photodetectors can be used optoelectronic device applications.

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Authors and Affiliations

  1. Vocational High School of Health Services, Kilis 7 Aralik University, 79000, Kilis, Turkey

    Mesut Yalcin

  2. Elazig Science and Art Center, 23120, Elazig, Turkey

    Denizhan Ozmen

  3. Department of Physics, Faculty of Science, Firat University, 23169, Elazig, Turkey

    Fahrettin Yakuphanoglu

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  1. Mesut Yalcin
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  2. Denizhan Ozmen
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  3. Fahrettin Yakuphanoglu
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Correspondence to Mesut Yalcin.

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Yalcin, M., Ozmen, D. & Yakuphanoglu, F. Sr-doped yttrium nickel oxide-based photodetectors. J Mater Sci: Mater Electron 31, 3441–3455 (2020). https://doi.org/10.1007/s10854-020-02892-z

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