Skip to main content
SpringerLink
Log in

Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation

  • Published:
Journal of Materials Science: Materials in Electronics Aims and scope Submit manuscript

Abstract

In this work, we report on the encapsulation of WO3-decorated porous silicon aluminum oxide (Al2O3). Porous layers, elaborated for different current densities, are decorated by quasi-spherical WO3 nanoparticles with different densities and sizes. AFM analysis shows that the WO3 deposition is controlled by the prepared porous silicon morphology. WO3-treated porous silicon samples were faithfully coated by ALD-Al2O3. A significant enhancement of porous silicon reflectance after AL2O3/WO3 deposition was obtained. In order to quantify the passivation effect of the dual treatment, the effective diffusion length (Leff) of the minority carriers is determined by Light Beam Induced Current (LBIC) measurements. An increase of Leff from 74 µm in porous silicon to 532 µm in AL2O3/WO3/PS sample is reached. This enhancement is attributed to the dangling bonds saturation by alumina and tungsten oxide which leads to the diminution of the surface recombination velocities.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Fig. 1
Fig. 2
Fig. 3
Fig. 4
Fig. 5
Fig. 6
Fig. 7
Fig. 8

Similar content being viewed by others

References

  1. L.T. Canham, Appl. Phys. Lett. 57, 1046 (1990)

    Article  CAS  Google Scholar 

  2. R.T. Collins, P.M. Fauchet, M.A. Tischler, Phys. Today 50, 24 (1997)

    Article  CAS  Google Scholar 

  3. A. Richter, P. Steiner, F. Kozlowski, W. Lang, IEEE Electron Devices Lett. 12, 691 (1991)

    Article  CAS  Google Scholar 

  4. M. Rajabi, R.S. Dariani, J Porous Mater. 16, 513 (2009)

    Article  CAS  Google Scholar 

  5. M.Y. Tabassi, R.B. Zaghouani, M. Khelil, K. Khirouni, W. Dimassi, J. Mater. Sci.: Mater. Electron. 28, 9717 (2017)

    CAS  Google Scholar 

  6. M. Alaya, R.B. Zaghouani, S. Khamlich, J.L. Lazzari, W. Dimassi, Thin Solid Films 645, 51 (2018)

    Article  CAS  Google Scholar 

  7. A.G. Aberle, Sol. Energy Mater. Sol. Cells 65, 239 (2001)

    Article  CAS  Google Scholar 

  8. S. Dauwe, J. Schmidt, R. Hezel, In 29th IEEE Photovoltaic Specialists Conference, New Orleans (2002)

  9. B. Hoex, S.B.S. Heil, E. Langereis, M.C.M. Van de Sanden, W.M.M. Kessels, Appl. Phys. Lett. 89, 042112 (2006)

    Article  Google Scholar 

  10. S. Dauwe, L. Mittelstädt, A. Metz, R. Hezel, Prog. Photovolt. Res. Appl. 10, 271 (2002)

    Article  CAS  Google Scholar 

  11. R. Hezel, K. Jaeger, J. Electrochem. Soc. 136, 518 (1989)

    Article  CAS  Google Scholar 

  12. P. Vitanov, A. Harizanova, T. Ivanova, T. Dimitrova, Thin Solid Films 517, 6327 (2009)

    Article  CAS  Google Scholar 

  13. G. Dingemans, M.C.M. Van de Sanden, W.M.M. Kessels, Electrochem. Solid-State Lett. 13, H76 (2010)

    Article  CAS  Google Scholar 

  14. P. Saint-Cast, J. Benick, D. Kania, L. Weiss, M. Hofmann, J. Rentsch, R. Preu, S.W. Glunz, IEEE Electron Device Lett. 31, 695 (2010)

    Article  CAS  Google Scholar 

  15. T.T. Li, A. Cuevas, Phys. Status Solidi (RRL)-Rapid Res. Lett. 3, 160 (2009)

    Article  CAS  Google Scholar 

  16. G. Dingemans, N.M. Terlinden, D. Pierreux, H.B. Profijt, M.C.M. Van de Sanden, W.M.M. Kessels, Electrochem. Solid-State Lett. 14, H1 (2011)

    Article  CAS  Google Scholar 

  17. S. Badilescu, P.V. Ashrit, Solid State Ion. 158, 187 (2002)

    Article  Google Scholar 

  18. M.B. Rabha, W. Dimassi, M. Bouaïcha, H. Ezzaouia, B. Bessais, Sol. Energy 83, 721 (2009)

    Article  Google Scholar 

  19. M.B. Rabha, M. Salem, M.A. El Khakani, B. Bessais, M. Gaidi, Mater. Sci. Eng. B 178, 695 (2013)

    Article  Google Scholar 

  20. Y. Sayad, A. Kaminski, D. Blanc, A. Nouiri, M. Lemiti, Superlatt. Microstruct. 45, 393 (2009)

    Article  CAS  Google Scholar 

Download references

Acknowledgements

The authors wish to thank Alain Ranguis and Damien Chaudanson for AFM and SEM measurements done at the Centre Interdisciplinaire de Nanoscience de Marseille (CINaM).

Author information

Authors and Affiliations

  1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de l’Energie, Technopôle de Borj-Cédria, BP, 95 Hammam-Lif, Tunis, Tunisia

    R. Benabderrahmane Zaghouani, M. Alaya, H. Nouri & W. Dimassi

  2. Aix Marseille Université, CNRS, CINaM UMR 7325, Campus de Luminy, Case 913, 163, Avenue de Luminy, 13288, Marseille Cedex 09, France

    J.-L. Lazzari

Authors
  1. R. Benabderrahmane Zaghouani
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. M. Alaya
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. H. Nouri
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. J.-L. Lazzari
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. W. Dimassi
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to R. Benabderrahmane Zaghouani.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Zaghouani, R.B., Alaya, M., Nouri, H. et al. Study of WO3-decorated porous silicon and Al2O3-ALD encapsulation. J Mater Sci: Mater Electron 29, 17731–17736 (2018). https://doi.org/10.1007/s10854-018-9879-1

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s10854-018-9879-1

Search

Navigation