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Investigation of Cu–Sn–Se material for high-speed phase-change memory applications

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Abstract

Cu–Sn–Se material was prepared by magnetron sputtering to investigate its potential application in phase change memory. The amorphous-to-crystalline transition was studied by in situ film resistance measurements. Cu–Sn–Se material had lower activation energy for crystallization (1.60 eV) and higher crystallization resistance than SnSe. The amorphous Cu–Sn–Se had more narrow band gap compared to SnSe. After the adding of Cu, the crystallization of Cu–Sn–Se material was inhibited and the grain structure became more compact. The picosecond laser pulse measurement indicated that Cu–Sn–Se material had a fast phase change speed (3.36 ns). The results demonstrated that Cu–Sn–Se material was a promising phase change material which had low power and high speed application in phase change memory.

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Acknowledgements

This work was supported by Natural Science Foundation of Jiangsu Province (BK20151172) and Changzhou Science and Technology Bureau (CJ20160028 and CJ20159049) and Basic Research Program of Jiangsu Education Department (15KJB430012) and sponsored by Qing Lan Project.

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Authors and Affiliations

  1. School of Mathematics and Physics, Jiangsu University of Technology, Changzhou, 213000, China

    Haipeng You, Yifeng Hu, Xiaoqin Zhu & Hua Zou

  2. State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China

    Sannian Song & Zhitang Song

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  1. Haipeng You
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  2. Yifeng Hu
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  3. Xiaoqin Zhu
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  4. Hua Zou
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Correspondence to Yifeng Hu or Xiaoqin Zhu.

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You, H., Hu, Y., Zhu, X. et al. Investigation of Cu–Sn–Se material for high-speed phase-change memory applications. J Mater Sci: Mater Electron 28, 10199–10204 (2017). https://doi.org/10.1007/s10854-017-6784-y

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  • DOI: https://doi.org/10.1007/s10854-017-6784-y

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