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Study of temperature sensitivity and impedance spectroscopy of zirconium oxynitride thin film thermistors

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Abstract

Zirconium oxynitride thin film thermistors possess many desirable attributes in a temperature sensor including high sensitivity, excellent long-term stability due to its excellent physical, chemical and mechanical properties. In order to predict and optimize the zirconium oxynitride thin film ultimate performance, temperature sensitivity and electronic properties of zirconium oxynitride thin films deposited by reactive magnetron sputtering process with various flow rates of reactive gases (N2 + O2) have been studied. The results revealed that flow rates of reactive gases have great influence on the temperature coefficient of electrical resistivity (TCR) of zirconium oxynitride thin film. With the flow rates of reactive gases increasing, TCR of zirconium oxynitride thin film increase firstly and then decreased, in which reaches a maximum value at 8 sccm. In addition, impedance spectroscopy was employed to analyze the contributions of grain boundary and grain to the conduction mechanism.

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Acknowledgements

The authors thank to partly financial support from the National Natural Science Foundation of China (No. 51475307), 973 Program (2013CB329401), SRFDP (20130073110087). The authors are also grateful to the colleagues for their essential contribution to this work.

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Authors and Affiliations

  1. National Key Laboratory of Science and Technology on Micro/Nano Fabrication, Department of Micro/Nano-electronics, Collaborative Innovation Center of IFSA, Shanghai Jiao Tong University, Shanghai, 200240, China

    Guanghui Zhan, Zude Lin, Bin Xu, Jie Feng, Bin Yang, Xiang Chen, Chunsheng Yang & Jingquan Liu

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  1. Guanghui Zhan
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  2. Zude Lin
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  3. Bin Xu
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  8. Jingquan Liu
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Correspondence to Jingquan Liu.

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Zhan, G., Lin, Z., Xu, B. et al. Study of temperature sensitivity and impedance spectroscopy of zirconium oxynitride thin film thermistors. J Mater Sci: Mater Electron 28, 9653–9657 (2017). https://doi.org/10.1007/s10854-017-6715-y

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  • DOI: https://doi.org/10.1007/s10854-017-6715-y

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